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Shenzhen Mingjiada Electronics Co., Ltd.
Model

VSC7427XJG-02 VSC7425XJG-02 88E6190-A0-TLA2C000

Service Telephone:86-755-83294757

Product Classification

Integrated Circuit Chip

Ethernet CAN Transceiver Server Management Processor High Bandwidth Bus Switch Differential Amplifiers Analogue Crosspoint Switch HDMI Transmitter Laser Driver Analog Switch IC Ultrasonic receiver Multiplexer and demultiplexer Video Processor Video Encoder Interface-Serial Digital Interface (SDI) IC AI chips Interface-retimer Transimpedance Amplifiers CXL Near Memory Accelerator and Memory Expansion Controller Analog multiplier RS-422/RS-485 Interface IC Isolated CAN transceiver Instrumentation Amplifiers PCI Express Switches Automotive System-on-Chip

IoT/IGBT Module

2G Module 4G Module 5G Module IoT Module New Energy Module Vehicle-Grade Module Smart Module Memory Module Cellular IoT Module Satellite Communication Module GNSS Module LPWA Modules IoT Chips

Filter

Band Stop Filters Low Pass Filter Bandpass Filters SAW Filter BAW Filter Wi-Fi Filter 2.4GHz Wi-Fi Bandpass Filter Active filter RF Filter High Pass Filters 5GHz Wi-Fi Bandpass Filter 6GHz Wi-Fi Bandpass Filter

Wireless Connection

Wi-Fi 6 Bluetooth IC Bluetooth 5.1 Bluetooth 5.0 Bluetooth 5.2 Wireless Communication Chip Near Field Communication (NFC) WiFi Bluetooth Wi-Fi chip Ultra Wideband UWB IC GNSS Receiver Wi-Fi 4 WiFi Modules Bluetooth Low Power Wi-Fi 5 Wi-Fi 7 Wireless Communication Module Wireless NIC Chips Bluetooth Module WiFi Wireless Module Bluetooth Audio SoC

AI Processor Chip

Discrete Semiconductor

Transistor - FET, MOSFET - Single Silicon Carbide (SiC) JFET Silicon Diodes Power Modules Radio frequency transistor Power MOSFET Modules Silicon Carbide (SIC) FET Modules Silicon Carbide (SIC) FETs MOSFET a canale P Transistors - RF FETs, MOSFETs MOSFET Modules Thyristor Diode array module MOSFET Transistor N-Channel MOSFET IGBT Transistor Diodes & Rectifiers Schottky Diodes & Rectifiers Single Zener Diodes Bipolar Transistor Array Power Driver Module Diodes - Rectifiers - Single Transistor - FET, MOSFET - Array Transistor - IGBT - Module

Power Management

Gallium Nitride (GaN) ICs Linear Regulator LDO AC-DC Controller And Voltage Regulator DC-DC Power Products Voltage Reference Battery Management Boost controller Power over Ethernet (PoE) controller

Connectors

Crimp-To-Wire Connector Nearstack Connector ExtremePort Swift Connectors Multi-Trak™ Connectors VITA 67.3 Connectors SpaceVPX VITA 78 Connectors ExtremePort Z-Link Connectors Displayport Connectors Magnetic Jack Connectors SAS/PCIe 5.0 Connectors SAS/PCIe 4.0 Connectors Mini USB Connectors SFP112G Connectors MiniSAS HD Connectors OSFP-XD Connectors DSFP Connectors CXP Connectors QSFP Connectors OSFP Connectors SFP Connectors CFP2 Connectors Mini Cool Edge IO Connectors SlimSAS™ Connectors Mini-SAS High Density Connectors

Sensor

Accelerometer Magneto-Resistive Sensors Angle sensor Hall Effect Switches Inductive sensor Hall Effect Latch and Switch Biosensor Time-of-Flight Sensors Sensor Signal Conditioners Optical Sensors Flow Sensors Board Mounted Humidity Sensor Biometric Sensors Speed Sensors Humidity Sensor Hall effect current sensor Ultrasonic Sensor Optical Sensors,Photodiodes Humidity, Moisture Sensitive Sensors Optical detectors and sensors-Infrared detectors Board Mount Temperature Sensor Gas Sensor Position Sensor Industrial Millimetre Wave Radar Sensors

Memory

NOR Flash Nonvolatile Memory Random access memory RAM Static random access memory SRAM Synchronous dynamic random access memory SDRAM SSD Controllers AI Memory. F-RAM LPDDR5 uMCP EEPROM Solid State Drives - SSD Standard Serial EEPROM Automotive Grade Serial EEPROM eMMC Pseudo Static Random Access Memory (PSRAM) Erasable Programmable ROM NAND Flash Universal Flash Storage - UFS Dynamic random access memory DRAM Memory - Modules

Resistor network

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Home /Company Dynamics /

GS61008T-MR 100 V CoolGaN™ e-mode power transistor parameters in Chinese

GS61008T-MR 100 V CoolGaN™ e-mode power transistor parameters in Chinese

Source:our siteTime:2024-05-24Views:

Overview:The GS6100x 100V E-HEMT transistor is an enhanced silicon-based gallium nitride power device. These transistors have GaN characteristics and provide high current, high breakdown voltage and extremely high switching frequency. The GS6100x tran…

Overview:

The GS6100x 100V E-HEMT transistor is an enhanced silicon-based gallium nitride power device. These transistors have GaN characteristics and provide high current, high breakdown voltage and extremely high switching frequency. The GS6100x transistor uses an island technology cell layout to provide high current chips and high yields. They are also packaged in GaNPX, providing low conductivity and low thermal resistance in a small package. GS6100x transistors provide extremely low junction to housing thermal resistance for high power applications. All of these features combined provide a very efficient power switch.


GS61008T-MR Parameters:

Technology: GaN-on-Si

Installation style: SMD/SMT

Package/box: GaNpx

Transistor polarity: N-Channel

Number of channels: 1 Channel

Vds- drain-source breakdown voltage: 100 V

Id- Continuous drain current: 90 A

Rds On- drain-source on-resistance: 9.5 mOhms

Vgs - grid - source voltage: -10 V, + 7 V

Vgs TH-gate source threshold voltage: 1.1V

Qg- Grid charge: 8 nC

Minimum operating temperature: -55 °C

Maximum operating temperature: + 150°C

Pd- Power dissipation: -

Channel mode: Enhancement

Brand name: GaNPX

Series: GS6100x

Configuration: Single

Development kit: GS61008P-EVBHF

Humidity sensitivity: Yes

Product type: MOSFET

Unit weight: 3 g


Applications:

Uninterruptible Power Supply (UPS)

Industrial motor drive

robotics

Wireless power transmission

Fast battery charging

Class D amplifier

Energy storage system

Ac /DC converter (secondary side)

Traction drive


If there is any need, please contact Mr. Chen:

Tel: +8613410018555

Email: sales@hkmjd.com


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