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Supply Infineon N-channel Power MOSFET BSC028N06LS3G OptiMOS™ Power Transistor (60V)

Supply Infineon N-channel Power MOSFET BSC028N06LS3G OptiMOS™ Power Transistor (60V)

Source:our siteTime:2025-06-24Views:

Product OverviewThe BSC028N06LS3G is a 60V N-channel power MOSFET in Infineons OptiMOS™3 series, packaged in a PG-TDSON-8 package. It features an ultra-low on-resistance (RDS(on)) of 2.8mΩ and a continuous drain current capability of 100A, specifica…

Product Overview

The BSC028N06LS3G is a 60V N-channel power MOSFET in Infineon's OptiMOS™3 series, packaged in a PG-TDSON-8 package. It features an ultra-low on-resistance (RDS(on)) of 2.8mΩ and a continuous drain current capability of 100A, specifically designed for high-efficiency applications such as high-frequency switching power supplies, synchronous rectification, and motor drives. By optimising switching performance and conduction losses, this device significantly enhances system efficiency and is widely used in server power supplies, telecommunications equipment, and industrial automation applications.


Key Features of BSC028N06LS3G

Ultra-low on-resistance: 2.8mΩ at VGS=10V, significantly reducing conduction losses.

High figure of merit (FOM): RDS(on) × Qg = 28 mΩ × nC, enabling efficient switching.

100% avalanche testing ensures reliability under extreme conditions.

Low gate charge (Qg): typical value of 28 nC, reducing drive losses.

Fast switching speed: Rise time 17ns, fall time 19ns, enhancing efficiency in high-frequency applications.  

Low reverse recovery charge (Qrr), improving EMI performance.  

PG-TDSON-8 package: Optimised thermal resistance (RthJC=0.75K/W).  

Maximum junction temperature of 175°C, suitable for harsh operating environments.  

Compliant with RoHS standards, halogen-free design.

Operating temperature range: -55°C to +150°C, suitable for automotive and industrial applications.


Key parameters BSC028N06LS3G  

Drain-source voltage (Vdss): 60V  

Continuous drain current (Id): 100A  

On-resistance (RDS(on)): 2.8mΩ  

Gate charge (Qg): 28nC

Input capacitance (Ciss): 13000 pF  

Switching time (tr/tf): 17 ns / 19 ns  

Maximum power dissipation (Pd): 2.5 W (Ta), 139 W (Tc)  

Package type: PG-TDSON-8 (6.1 mm × 5.35 mm)

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Applications for BSC028N06LS3G

Automotive Battery Management System (BMS)

Home Robots

Advanced semiconductor technology enabling the development of a new digital, ultra-connected healthcare ecosystem


Mingjiada Electronics' Supply Advantages

Abundant Stock Availability: Mingjiada Electronics in Shenzhen maintains ample inventory of BSC028N06LS3G to meet bulk purchase demands and ensure timely delivery.

Authentic Product Guarantee: As a professional electronic component distributor, Mingjiada Electronics provides only authentic BSC028N06LS3G products, ensuring product quality and reliability.

Flexible Service Models: Mingjiada Electronics offers flexible procurement options, providing customised services for both small-scale trial production and large-scale production to meet diverse customer needs.

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Contact Information  

If you are interested in the Infineon N-channel power MOSFET BSC028N06LS3G or have procurement needs, please feel free to contact us:  

Phone: +86 13410018555 (Mr. Chen)  

Email: sales@hkmjd.com  

Website: www.hkmjd.com

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