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Supply Infineon N-channel Power MOSFET BSC028N06LS3G OptiMOS™ Power Transistor (60V)
Product OverviewThe BSC028N06LS3G is a 60V N-channel power MOSFET in Infineons OptiMOS™3 series, packaged in a PG-TDSON-8 package. It features an ultra-low on-resistance (RDS(on)) of 2.8mΩ and a continuous drain current capability of 100A, specifica…
Product Overview
The BSC028N06LS3G is a 60V N-channel power MOSFET in Infineon's OptiMOS™3 series, packaged in a PG-TDSON-8 package. It features an ultra-low on-resistance (RDS(on)) of 2.8mΩ and a continuous drain current capability of 100A, specifically designed for high-efficiency applications such as high-frequency switching power supplies, synchronous rectification, and motor drives. By optimising switching performance and conduction losses, this device significantly enhances system efficiency and is widely used in server power supplies, telecommunications equipment, and industrial automation applications.
Key Features of BSC028N06LS3G
Ultra-low on-resistance: 2.8mΩ at VGS=10V, significantly reducing conduction losses.
High figure of merit (FOM): RDS(on) × Qg = 28 mΩ × nC, enabling efficient switching.
100% avalanche testing ensures reliability under extreme conditions.
Low gate charge (Qg): typical value of 28 nC, reducing drive losses.
Fast switching speed: Rise time 17ns, fall time 19ns, enhancing efficiency in high-frequency applications.
Low reverse recovery charge (Qrr), improving EMI performance.
PG-TDSON-8 package: Optimised thermal resistance (RthJC=0.75K/W).
Maximum junction temperature of 175°C, suitable for harsh operating environments.
Compliant with RoHS standards, halogen-free design.
Operating temperature range: -55°C to +150°C, suitable for automotive and industrial applications.
Key parameters BSC028N06LS3G
Drain-source voltage (Vdss): 60V
Continuous drain current (Id): 100A
On-resistance (RDS(on)): 2.8mΩ
Gate charge (Qg): 28nC
Input capacitance (Ciss): 13000 pF
Switching time (tr/tf): 17 ns / 19 ns
Maximum power dissipation (Pd): 2.5 W (Ta), 139 W (Tc)
Package type: PG-TDSON-8 (6.1 mm × 5.35 mm)
Applications for BSC028N06LS3G
Automotive Battery Management System (BMS)
Home Robots
Advanced semiconductor technology enabling the development of a new digital, ultra-connected healthcare ecosystem
Mingjiada Electronics' Supply Advantages
Abundant Stock Availability: Mingjiada Electronics in Shenzhen maintains ample inventory of BSC028N06LS3G to meet bulk purchase demands and ensure timely delivery.
Authentic Product Guarantee: As a professional electronic component distributor, Mingjiada Electronics provides only authentic BSC028N06LS3G products, ensuring product quality and reliability.
Flexible Service Models: Mingjiada Electronics offers flexible procurement options, providing customised services for both small-scale trial production and large-scale production to meet diverse customer needs.
Contact Information
If you are interested in the Infineon N-channel power MOSFET BSC028N06LS3G or have procurement needs, please feel free to contact us:
Phone: +86 13410018555 (Mr. Chen)
Email: sales@hkmjd.com
Website: www.hkmjd.com
Time:2025-06-24
Time:2025-06-24
Time:2025-06-24
Time:2025-06-24
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