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IGBT Transistors FGA40N65SMD and FGA40T65SHD Field Cutoff IGBT 650 V, 40 A

IGBT Transistors FGA40N65SMD and FGA40T65SHD Field Cutoff IGBT 650 V, 40 A

Source:our siteTime:2024-04-25Views:

Shenzhen Mingjiada Electronics Co., Ltd. original supply IGBT transistor FGA40N65SMD and FGA40T65SHD field cut-off IGBT 650 V, 40 ADevice Model: FGA40N65SMD, FGA40T65SHDCategory: IGBT TransistorsManufacturer: onsemi Package: Tube Part Status: On Sal…

Shenzhen Mingjiada Electronics Co., Ltd. original supply IGBT transistor FGA40N65SMD and FGA40T65SHD field cut-off IGBT 650 V, 40 A


Device Model: FGA40N65SMD, FGA40T65SHD

Category: IGBT Transistors

Manufacturer: onsemi  

Package: Tube  

Part Status: On Sale  

IGBT Type: Field Cutoff  

Voltage - Collector Breakdown (Max): 650 V  

Current - Collector (Ic) (Max): 80 A  

Current - Collector Pulse (Icm): 120 A  

Vce(on) at varying Vge, Ic (max): 2.5V @ 15V, 40A  

Power - Max: 349 W  

Switching Energy: 820µJ (On), 260µJ (Off)  

Input Type: Standard  

Gate Charge: 119 nC  

Td (On/Off) at 25°C: Value 12ns/92ns  

Test Conditions: 400V, 40A, 6 Ohms, 15V  

Reverse Recovery Time (trr): 42 ns  

Operating Temperature: -55°C ~ 175°C (TJ)  

Mounting Type: Through Hole  

Package/Housing: TO-3P-3, SC-65-3  

Supplier Device Package: TO-3PN 

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Overview

ON Semiconductor's new field cutoff Gen 2 IGBTs feature a new field cutoff IGBT technology for applications where low conduction and switching losses are critical, such as solar inverters, UPS, welders, inductive heating, telecom, ESS and PFC.


Features

Maximum junction temperature TJ =175 °C

Positive temperature coefficient for easy parallel operation

High current capability

Low saturation voltage: VCE(sat) = 1.9 V (typical) @ IC = 40 A

Fast switching: EOFF = 6.5uJ/A

Tight parameter distribution

RoHS compliant


Applications

Power generation and distribution

Uninterruptible Power Supplies

Other industrial

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