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Infineon Technologies, a global semiconductor leader in power systems and the Internet of Things, will provide power modules suitable for traction inverters for Rivian's R2 platform. The R2 platform will use silicon carbide (SiC) and silicon (Si) modules from Infineon's HybridPACK™ Drive G2 product series. Infineon is expected to start supplying from 2026. In addition, Infineon will also offer other products for this platform, including the AURIX™ TC3x microcontroller and power management ics.

Stefan Obersriebnig, the head of the high-voltage module product line of Infineon Technologies' Automotive Electronics division, said: "We are committed to collaborating with innovative automotive companies like Rivian to jointly enhance the performance and range of electric vehicles." Due to its continuous pursuit of innovation and zero-defect quality, Infineon has become the preferred partner in the automotive industry. With our extensive product portfolio, systematic expertise and manufacturing capabilities, we play a key role in shaping zero-emission and sustainable transportation.

HybridPACK™ Drive is Infineon's market-leading power module series for electric vehicles. Since 2017, the sales volume of this series of products has exceeded 10.5 million units, making significant contributions to the transformation towards electrification. This transformation will drive the strong growth of the power semiconductor market, especially those based on wide bandgap materials such as silicon carbide (SiC).

With the advancement of the expansion project of the Jurin wafer fab, Infineon is building the world's most competitive 200mm silicon carbide (SiC) power semiconductor wafer fab and further consolidating its leading position as a high-quality and large-scale supplier in the automotive industry. The Infineon Jurin and Filah production bases have actually formed a "virtual collaborative factory" that is highly focused on wide bandgap (WBG) technological innovation by sharing technologies and processes. This collaboration enables the rapid increase in the production of silicon carbide (SiC) and gallium nitride (GaN) products, while achieving smooth and efficient operations and consolidating Infineon's technological leadership position in all power semiconductor materials, including Si, SiC and GaN.

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