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Mingjiada's new original supply silicon carbide MOSFET transistor IMBG65R039M1H 650V SiC MOSFET in a compact 7-pin SMD package, based on advanced Infineon silicon carbide trench technology, suitable for high power applications.

Product model: IMBG65R039M1H/IMBG65R039M1HXTMA1

Brand: INFINEON

Year: latest 21+

Package: TO-263-7

parameter

Product Category: MOSFET

Technology: SiC

Installation style: SMD/SMT

Transistor Polarity: N-Channel

Number of channels: 1 Channel

Vds-drain-source breakdown voltage: 650 V

Id-Continuous Drain Current: 54 A

Rds On-Drain Source On Resistance: 51 mOhms

Vgs - Gate-Source Voltage: - 5 V, + 23 V

Vgs th-gate-source threshold voltage: 5.7 V

Qg-gate charge: 41 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 175 C

Pd-Power Dissipation: 211 W

Advantage

High performance, high reliability and ease of use

High system efficiency and high power density

Reduce system cost and complexity

Create lower cost, simpler and smaller systems

Continuous hard commutation topology

Suitable for high temperature and harsh working environment

Implement bidirectional topology

Application

server

telecommunications

Switching Power Supplies (SMPS)

solar system

Energy Storage and Battery Systems

Uninterruptible Power Supply (UPS)

Electric vehicle charging

motor driver

The same series:

IGI60F100A1L/IGI60F100A1LAUMA1

IGI60F1414A1L/IGI60F1414A1LAUMA1

IMBG120R220M1H/IMBG120R220M1HXTMA1

IMZA120R014M1H/IMZA120R014M1HXKSA1

IMBG65R039M1H/IMBG65R039M1HXTMA1

IMBG120R090M1H/IMBG120R090M1HXTMA1

IMW120R040M1H/IMW120R040M1HXKSA1

IMW120R007M1H/IMW120R007M1HXKSA1

IMZ120R140M1H/IMZ120R140M1HXKSA1

IMZA120R040M1H/IMZA120R040M1HXKSA1

IMW65R107M1H/IMW65R107M1HXKSA1

IMBF170R1K0M1/IMBF170R1K0M1XTMA1

Welcome to contact

E-mail: sales@hkmjd.com

Skype: mjdccm

Company website: www.hkmjd.com