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Supply new and original IMBG120R220M1H_IMBG120R220M1HXTMA1 1200V trench silicon carbide MOSFET
Mingjiada company supplies new original IMBG120R220M1H_IMBG120R220M1HXTMA1 1200V trench silicon carbide MOSFET
Mingjiada company supplies new original IMBG120R220M1H_IMBG120R220M1HXTMA1 1200V trench silicon carbide MOSFET
Model: IMBG120R220M1H_IMBG120R220M1HXTMA1
Brand: Infineon
Year: latest 21+
Description: IMBG120R220M1H 1200 V CoolSiC™ trench SiC MOSFET in TO-263-7 package.
Specifications
FET type N channel
Technology SiCFET (Silicon Carbide)
Drain-source voltage (Vdss) 1200 V
Current at 25°C - Continuous Drain (Id) 13A (Tc)
On-resistance (max) at various Id, Vgs 294 milliohms @ 4A, 18V
Vgs(th) (max) at different Id 5.7V @ 1.6mA
Gate charge (Qg) (max) at different Vgs 9.4 nC @ 18 V
Vgs (max) +18V, -15V
Input Capacitance (Ciss) at Vds (max) 312 pF @ 800 V
FET function Standard
Power Dissipation (Maximum) 83W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-12
Package/Case TO-263-8, D²Pak (7-lead + tab), TO-263CA
Advantage
Improve efficiency
Achieve higher operating frequencies
Increase power density
Reduce cooling work
Reduce system complexity and cost
SMD package, can achieve natural convection cooling without additional heatsink, so it can be directly integrated into the PCB
Application field
Uninterruptible Power Supply (UPS)
Electric vehicle fast charging
Industrial Motor Drive and Control
Solar System Solutions
Time:2024-11-16
Time:2024-11-16
Time:2024-11-16
Time:2024-11-16
Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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