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Supply Infineon CoolSiC™ Products:Silicon Carbide MOSFET Discrete, Silicon Carbide MOSFET Module

Shenzhen Mingjiada Electronics Co., Ltd. is a globally renowned recycler of electronic components. With strong economic strength and good business reputation, we have quickly won the trust of many factory customers and established long-term cooperative relationships. The company provides customers with high quality service by endeavouring to deal with things, treating people in good faith, professional technology and rich experience.

Mainly engaged in: integrated circuit IC, 5G chip, new energy IC, IoT chip, Bluetooth chip, automotive chip, artificial intelligence IC, Ethernet IC, memory chips, sensors, IGBT modules and so on.

Silicon Carbide MOSFET Discrete Devices Explained

Infineon CoolSiC™ MOSFET discrete devices represent a major breakthrough in power semiconductor technology. These discrete devices use advanced trench gate technology to provide lower on-resistance and higher switching efficiency than conventional planar gate SiC MOSFETs. Structurally, CoolSiC™ MOSFETs achieve excellent gate control and carrier mobility through the formation of high-quality gate oxide and trench regions on a silicon carbide substrate. This innovative design allows the device to further improve switching performance and reliability while maintaining the inherent advantages of SiC material.

In terms of electrical characteristics, the Infineon CoolSiC™ MOSFET discrete devices demonstrate excellent performance parameters. Their wide range of on-resistance (RDS(on)), from 52.9mΩ to 1.44mΩ, meets the needs of applications with different power levels. Compared to conventional silicon-based MOSFETs, CoolSiC™ devices offer significantly lower on-resistance for the same chip area, which means lower conduction loss and higher operating efficiency. In terms of switching characteristics, these devices support MHz-level switching speeds, significantly reducing the size and cost of passive components in the system, such as inductors and capacitors. In addition, CoolSiC™ MOSFETs feature extremely low reverse recovery charge (Qrr), which significantly reduces switching losses and electromagnetic interference (EMI) in bridge topology applications.

Thermal performance is another major advantage of CoolSiC™ MOSFET discrete devices. Thanks to the high thermal conductivity of the SiC material (about three times that of silicon) and an optimised package design, these devices can support junction temperature operation up to 175°C, well above the typical 125°C limit for conventional silicon devices. This feature allows system designers to reduce the size and cost of the heat sink or increase the power density of the system under the same heat sink conditions. In practice, this can mean a more compact power supply design or higher output power capability. The detailed thermal impedance parameters and derating curves are included in the technical data provided by Minjata Electronics to help customers accurately assess the thermal performance of the devices under real operating conditions.

In terms of reliability, Infineon CoolSiC™ MOSFET discrete devices undergo rigorous quality certification and reliability testing. The products comply with industrial and automotive grade (AEC-Q101) standards, ensuring stable long-term operation in various harsh environments. Particularly worth mentioning is that Infineon has solved the common threshold voltage instability problem of early SiC MOSFETs by optimising the gate oxide process, which greatly extends the service life of the devices.

Technical Analysis of Silicon Carbide MOSFET Modules

Infineon CoolSiC™ MOSFET modules provide system-level solutions for high-power applications. These modules integrate multiple CoolSiC™ MOSFET chips with optimally designed gate drivers, temperature sensors and protection circuits in the same package, greatly simplifying the design complexity of high-power power electronics systems. Compared to discrete devices, the modular design provides higher power density, better thermal performance and more reliable system integration, making it particularly suitable for demanding application scenarios such as industrial motor drives, solar inverters, electric vehicle electric drive systems and fast charging piles.

From a technical architecture point of view, Infineon's CoolSiC™ MOSFET modules feature an innovative package design and low inductance layout. Inside the module, a high-performance ceramic substrate (DCB or AMB) is used as an insulating and thermally conductive medium, on which the SiC MOSFET chip, the continuity diode chip and the necessary passive components are arranged. The power terminals of the module are crimped or soldered to ensure low contact resistance and high mechanical reliability. Particularly noteworthy is the careful optimisation of the wiring inside the module to minimise parasitic inductance, which is essential to take advantage of the high frequency of SiC devices.

In terms of electrical performance, CoolSiC™ MOSFET modules demonstrate excellent system efficiency. Measured data shows that system efficiencies with CoolSiC™ modules can be improved by 3-5% over conventional silicon-based IGBT modules, which translates into significant energy savings in megawatt power applications. The module's extremely low switching losses allow the system to operate at higher frequencies (typically up to 50-100kHz), which significantly reduces the size and weight of filters and transformers. In addition, the SiC Schottky diode integrated inside the module has zero reverse recovery characteristics, further reducing losses and noise during switching.

In terms of thermal management, CoolSiC™ MOSFET modules offer excellent thermal performance. The modules are designed with low thermal resistance, with thermal resistance (Rth(j-c)) typically more than 30% lower than equivalent silicon-based modules. Combined with the high thermal conductivity of the SiC material itself, modules can operate reliably at higher ambient temperatures or achieve the same temperature rise limits with a smaller heat sink. Some high-end modules also have integrated temperature sensors (NTC or PTC) that provide real-time junction temperature monitoring, facilitating system over-temperature protection and lifetime prediction.