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Infineon N-Channel MOSFET_BSC0901NSI_OptiMOS™ Power MOSFET, 30V

Infineon N-Channel MOSFET_BSC0901NSI_OptiMOS™ Power MOSFET, 30V

Source:our siteTime:2025-04-11Views:

Mingjiada Electronics Supplies Genuine Infineon BSC0901NSI OptiMOS™ Power MOSFET --30V N-Channel MOSFET, Low On-Resistance, High Efficiency Power Solutions1.Product DescriptionMingjiada Electronics specialises in supplying Infineon genuine BSC0901NSI…

Mingjiada Electronics Supplies Genuine Infineon BSC0901NSI OptiMOS™ Power MOSFET --30V N-Channel MOSFET, Low On-Resistance, High Efficiency Power Solutions


1.Product Description

Mingjiada Electronics specialises in supplying Infineon genuine BSC0901NSI, a 30V N-channel power MOSFET belonging to the OptiMOS™ 5 series with advanced trench gate technology, featuring ultra-low on-resistance and high switching efficiency for high efficiency power supply applications such as DC-DC converter, motor drive, battery protection and so on.


The BSC0901NSI is available in a SuperSO8 package with a compact size (5mm x 6mm), while supporting high current carrying capacity (continuous drain current up to 100A), making it an ideal choice for server power supplies, communication equipment, power tools, and other fields.

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2.BSC0901NSI core features and advantages

Main Characteristics

Low on-resistance: only 0.9 milliohms, minimising conduction loss and improving efficiency.

High Current Capability: Maximum current up to 100 amps to meet high power applications.

Fast switching speed: Low gate charge and low input capacitance reduce switching losses.

Compact package: TDSON-8 package saves board space and is suitable for high-density designs.

Integrated Schottky diode: optimises synchronous rectification performance.


Advantages

Extended battery life: Low power design for portable devices.

Improved EMI performance: Simplified circuit design by eliminating the need for external snubber networks.

Cost and space saving: Compact package and efficient performance reduce system cost.

High reliability: RoHS compliant to ensure environmental protection and reliability.


3.BSC0901NSI Specifications and Parameters

Type: N-channel MOSFET

Voltage Rating: 30V

Continuous drain current: 100A (@25°C)

On-resistance: 0.9mΩ

Gate charge: 68nC

Package: SuperSO8 (5mm x 6mm)

Operating temperature range: -55°C ~ +150°C

Compliance standards: RoHS, AEC-Q101 (optional)


4.BSC0901NSI Potential Applications

Power conversion: for DC-DC and AC-DC converters to provide efficient power management.

Motor Drive: For motor drive circuits to achieve high efficiency control.

Wireless Charging: Provide efficient and safe wireless charging function.

LED Lighting: For LED lighting power supplies to improve lighting efficiency.

Server and communication equipment: Optimise voltage regulator performance.


Contacts

Tel: +86 13410018555

Email: sales@hkmjd.com

Website: www.hkmjd.com


Summary

Infineon BSC0901NSI OptiMOS™ power MOSFETs are the first choice for high efficiency power supply designs with their ultra-low and high current capability. As a professional component supplier, Mingjiada Electronics ensures the original and genuine BSC0901NSI, fast delivery, and provides all-round technical support, welcome to contact us!

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