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March 19, 2025 - ONSEMI has introduced its first-generation SPM 31 Intelligent Power Module (IPM) family based on 1200V Silicon Carbide (SiC) Metal Oxide Semiconductor field effect transistors (MOSFETs). Compared to the use of 7th generation field-stop (FS7) IGBT technology, ON Semiconductor's EliteSiC SPM 31 IPMs offer ultra-high efficiency and power density in an ultra-compact package size, resulting in a lower overall system cost than other leading solutions on the market. With improved thermal performance, reduced power consumption and support for fast switching speeds, these IPMs are ideally suited for three-phase inverter drive applications such as electronically commutated (EC) fans in applications such as AI data centres, heat pumps, commercial heating, ventilation and air conditioning (HVAC) systems, servo motors, robotics, variable frequency drives (VFDs) and industrial pumps and fans.

The EliteSiC SPM 31 IPM complements the ON Semiconductor IGBT SPM 31 IPM portfolio, which covers low currents from 15A to 35A, offering a wide range of current ratings from 40A to 70A. ON Semiconductor now offers an industry-leading range of widely scalable, flexible integrated power module solutions in compact packages.

With the growth of electrification and AI applications, particularly the construction of more AI data centres increasing energy demand, it is becoming increasingly important to reduce the energy consumption of applications in this sector. Power semiconductors capable of efficiently converting electrical energy play a key role in this transition to a low-carbon emission world.

As the number and size of data centres continues to grow, the need for EC fans is expected to increase as well. These cooling fans maintain an ideal operating environment for all equipment in the data centre, which is critical for accurate and error-free data transfer. SiC IPM ensures that EC fans operate reliably and with greater energy efficiency.

Like many other industrial applications such as compressor drives and pumps, EC fans require higher power density and efficiency than the larger IGBT solutions available. By switching to the EliteSiC SPM 31 IPM, customers will benefit from smaller size, higher performance, and simplified design due to a high degree of integration, resulting in shorter development time, lower overall system cost, and reduced greenhouse gas emissions. For example, compared to a system solution using current IGBT Power Integrated Modules (PIMs) with 500W of power loss at 70% load, the adoption of the highly efficient EliteSiC SPM 31 IPM reduces annual energy consumption and costs per EC fan by 52%.

The fully integrated EliteSiC SPM 31 IPM includes a separate upper bridge gate driver, low voltage integrated circuit (LVIC), six EliteSiC MOSFETs and a temperature sensor (voltage temperature sensor (VTS) or thermistor). Based on industry-leading M3 SiC technology, the module is optimised for hard-switching applications by reducing die size and improving short-circuit withstand time (SCWT) with the SPM 31 package for industrial inverter motor drives.The MOSFETs are in a three-phase bridge configuration with independent source connections on the lower bridge arm, providing flexibility in selecting the control algorithm.

In addition, the EliteSiC SPM 31 IPM includes the following benefits:

Low-loss, short-circuit rated M3 EliteSiC MOSFETs that protect equipment and components from catastrophic failures such as electric shock or fire.

Built-in undervoltage protection (UVP) to prevent damage to the device if the voltage is too low.

As a counterpart to the FS7 IGBT SPM 31, customers can choose different current ratings while using the same PCB board.

UL listed for compliance with national and international safety standards.

Single grounded power supply provides improved safety, device protection and noise reduction.

Simplify designs and reduce customer board size thanks to:

Gate driver control and protection

Built-in bootstrap diode (BSD) and bootstrap resistor (BSR)

Internal boost diode for upper bridge gate boost drive

Integrated temperature sensor (output VTS from LVIC and/or thermistor)

Built-in high speed high voltage integrated circuit