Welcome Here  Shenzhen Mingjiada Electronics Co., Ltd.

[Munich, Germany, February 27, 2025] Gallium nitride (GaN) technology plays a critical role in raising the level of performance of power electronics devices. However, to date, GaN suppliers have used a wide range of package types and sizes, with fragmented offerings and a lack of customer availability in a wide range of packages. To address this issue, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY), the global semiconductor leader in power systems, automotive and IoT, has introduced the CoolGaN™ G3 100V (IGD015S10S1) in the RQFN 5x6 package and the CoolGaN ™ G3 80V (IGE033S08S1) high performance GaN transistors in RQFN 3.3x3.3 packages.

CoolGaN™ G3 100V transistor in combination with WRTFN-9-2

These two new devices are compatible with industry-standard silicon MOSFET packages and meet customer demands for standardised packaging, easier handling and faster time-to-market,’ said Dr. Antoine Jalabert, Head of Medium Voltage GaN Product Line at Infineon Technologies.

The CoolGaN™ G3 100 V transistor device will be available in a 5x6 RQFN package with a typical on-resistance of 1.1 mΩ, and the CoolGaN™ G3 80 V will be available in a 3.3x3.3 RQFN package with a typical resistance of 2.3 mΩ. For the first time, the packages for the two transistors will allow for easy multi-source sourcing and complementary layouts to silicon designs, while the new packages and GaN combinations offer the opportunity to offer customers a more standardised package for their products. The low resistance connection and low parasitic effects of the new package and GaN combination enable high performance transistor outputs in common packages.

In addition, the chip-and-package combination has a larger exposed surface area and higher copper density for better heat distribution and dissipation, resulting in not only improved thermal conductivity but also high thermal cycle stability. 

Availability

Samples of the IGE033S08S1 and IGD015S10S1 GaN transistors in RQFN packages will be available from April 2025 onwards.