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Micron Technology, Inc. (NASDAQ: MU) today announced that it has been the first to ship samples of 1-gamma, sixth-generation (10-nanometer scale) DRAM node DDR5 memory designed for next-generation CPUs to ecosystem partners and select customers. Building on Micron's previous leadership in 1-alpha and 1-beta DRAM nodes, this new milestone for 1-gamma DRAM nodes will drive innovation for future computing platforms from cloud, industrial, and consumer applications to end-side AI devices such as AI PCs, smartphones, and automobiles. The Micron 1γ DRAM node will initially be available in its 16Gb DDR5 DRAM products and is planned to be progressively integrated into Micron's memory portfolio to meet the AI industry's growing demand for high-performance, power-efficient memory solutions. This 16Gb DDR5 product delivers data transfer rates up to 9200MT/s, a rate increase of up to 15 per cent1 and a power reduction of more than 20 per cent2 compared to its predecessor.

The Importance of 1γ DRAM Nodes

With the proliferation of AI in data centres and end-side devices, user demand for memory is at an all-time high. Micron's move to 1γ DRAM nodes will help customers address their core challenges:

Improved performance - 1γ node-based DRAM delivers superior performance, enabling compute scaling across a wide range of memory products, from the data centre to end-side devices, to meet the demands of future AI workloads.

Reduce power consumption - Micron 1γ nodes use next-generation, high-K metal gate CMOS technology, which, combined with design optimisations, reduces power consumption by more than 20 percent and enables better heat dissipation.

Increased capacity density yield - Micron's 1γ node uses EUV lithography to improve capacity density yield on a single wafer by more than 30 percent over the previous generation through design optimisations and process innovations3, enabling more efficient memory supply scalability.

Micron's expertise in the development of proprietary DRAM technology, combined with the strategic use of EUV lithography, has resulted in an advanced memory portfolio based on 1γ nodes to help drive the AI ecosystem,’ said Scott DeBoer, Micron's executive vice president and chief technology and product officer. 1γ DRAM nodes enable higher capacity density yields, demonstrating Micron's excellence. underscores Micron's superior manufacturing strength and efficiency, and enables us to scale our memory supply to meet the industry's growing demand.’

Micron's success in creating optimised 1γ nodes builds on multiple generations of proven DRAM technology and manufacturing strategies. 1γ DRAM node innovations have been made possible by advances in CMOS technology, including next-generation, high-K metal gate technology, which improves transistor performance, enabling higher rates, more optimised designs, and smaller feature sizes, which deliver the benefits of both lower power consumption and performance scaling. The result is both reduced power consumption and performance scaling. Additionally, through the use of EUV lithography, 1γ nodes use extremely short wavelengths to etch finer features on silicon wafers, resulting in industry-leading capacity density benefits. At the same time, by developing 1γ nodes at manufacturing sites around the world, Micron can provide the industry with more advanced technology and greater supply resiliency.

Micron is once again leading the industry with the world's leading memory technology,’ said Sumit Sadana, Micron's executive vice president and chief commercial officer. 1γ DRAM process is a breakthrough achievement due to its superior energy efficiency and outstanding performance. Micron's 1γ DRAM products will provide scalable memory solutions across the spectrum from the data centre to end-side devices, enabling AI ecosystems and ensuring that our customers are able to respond to the industry's ever-changing needs.’

Driving product change from cloud to end-side

1γ nodes, a cornerstone of future products, will be fully integrated into Micron's memory portfolio:

Data Centre - 1γ-based DDR5 memory solutions provide data centres with up to 15% performance gains, enhance energy efficiency and support continued server performance scaling, enabling data centres to optimise for future rack-level power and thermal designs.

End-side AI - 1γ low-power DRAM solution delivers increased power efficiency and bandwidth to enhance the user experience of end-side AI solutions.

AI PC - 1γ DDR5 SODIMMs increase performance and reduce power consumption by 20%4 to extend battery life and optimise the user experience in laptops.

Mobile Devices - 1γ LPDDR5X delivers a superior AI experience, extending Micron's leadership in mobile devices.

Automotive - 1γ-based LPDDR5X memory delivers increased capacity, endurance and performance while delivering up to 9600MT/s.

Industry Quotes:

We are pleased with the progress Micron has made with 1γ DRAM nodes and the validation work already underway for Micron's 1γ DDR5 memory,’ said Amit Goel, corporate vice president of engineering for AMD's Server Platform Solutions Division. Our close collaboration with Micron is critical as we strive to continue to advance the computing ecosystem with our next-generation AMD EPYC (Rolls-Royce) datacentre products, as well as our full range of consumer processors.’

Dr Dimitrios Ziakas, vice president and general manager of Intel Memory and IO Technology, said, ‘Micron's 1γ node advancements bring significant power and capacity optimisation to Intel servers and AI PCs. We are pleased to see Micron's continued innovation in DRAM technology and look forward to building on these benefits to further enhance server system performance and PC endurance. Intel is validating samples of Micron's 1γ DDR5 memory through its rigorous server validation process to deliver high-quality, best-in-class server systems for our customers.’

Eligible customers and partners can join Micron's DDR5 Technical Support Programme (TEP) for early access to technical information, electrical and thermal modelling, and support on designing, developing and launching next-generation computing platforms.

1. Data rate improvements are based on an estimate of the expected rate of 1γ DDR5 memory products. 2.

2. power consumption reductions are based on a comparison of power consumption (watts) of 1γ DDR5 memory versus 1β DDR5 memory. 3. single wafer capacity improvements.

3. The percentage increase in capacity per wafer is based on a comparison of the overall capacity density of wafers in the 1β and 1γ processes.

4. The reduction in power consumption is based on a comparison of the power consumption (in watts) of 1γ DDR5 SODIMM memory and 1β DDR5 SODIMM memory.