sales@hkmjd.com
Service Telephone:86-755-83294757
Supply NXP A2I20H060GNR1 RF LDMOS Wideband Integrated Power AmplifiersProduct DescriptionA2I20H060GNR1 wideband integrated circuit is an asymmetrical Doherty designed with on-chip matching that makes it usable from 1800 to 2200 MHz. This multi-stage s…
Supply NXP A2I20H060GNR1 RF LDMOS Wideband Integrated Power Amplifiers
Product Description
A2I20H060GNR1 wideband integrated circuit is an asymmetrical Doherty designed with on-chip matching that makes it usable from 1800 to 2200 MHz. This multi-stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats.
Product Attributes
Technology:LDMOS
Configuration:Dual
Frequency:1.84GHz
Gain:28.9dB
Voltage - Test:28 V
Current - Test:24 mA
Power - Output:12W
Voltage - Rated:65 V
Mounting Type:Surface Mount
Features
Advanced High Performance In--Package Doherty
On-Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
Designed for Digital Predistortion Error Correction Systems
Time:2024-11-19
Time:2024-11-19
Time:2024-11-19
Time:2024-11-19
Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links: