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[Supply, Recycle] STPSC20065WY (ST) Automotive 650V power Schottky silicon carbide diode
Shenzhen Mingjiada Electronics Co., Ltd. [Supply, Recycle] STPSC20065WY (ST) Automotive 650V power Schottky silicon carbide diodeProduct DescriptionSTPSC20065WY is an ultra high performance power Schottky diode. It is manufactured using a silicon carb…
Shenzhen Mingjiada Electronics Co., Ltd. [Supply, Recycle] STPSC20065WY (ST) Automotive 650V power Schottky silicon carbide diode
Product Description
STPSC20065WY is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Product Attributes
Technology: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
Grade: Automotive
Qualification: AEC-Q101
Mounting Type: Through Hole
Package / Case: DO-247-2 (Straight Leads)
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C
Product Features
No reverse recovery charge in application current range
Switching behavior independent of temperature
Dedicated to PFC applications
High forward surge capability
ECOPACK®2 compliant component
PPAP capable
Operating Tj from -40 °C to 175 °C
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E-mail: sales@hkmjd.com
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Time:2024-11-19
Time:2024-11-19
Time:2024-11-19
Time:2024-11-19
Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
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