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[Supply, Recycle] STPSC20065WY (ST) Automotive 650V power Schottky silicon carbide diode

[Supply, Recycle] STPSC20065WY (ST) Automotive 650V power Schottky silicon carbide diode

Source:our siteTime:2023-11-04Views:

Shenzhen Mingjiada Electronics Co., Ltd. [Supply, Recycle] STPSC20065WY (ST) Automotive 650V power Schottky silicon carbide diodeProduct DescriptionSTPSC20065WY is an ultra high performance power Schottky diode. It is manufactured using a silicon carb…

Shenzhen Mingjiada Electronics Co., Ltd. [Supply, Recycle] STPSC20065WY (ST) Automotive 650V power Schottky silicon carbide diode


Product Description

STPSC20065WY is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.


Product Attributes

Technology: SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max): 650 V

Current - Average Rectified (Io): 20A

Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A

Speed: No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr): 0 ns

Current - Reverse Leakage @ Vr: 300 µA @ 650 V

Capacitance @ Vr, F: 1250pF @ 0V, 1MHz

Grade: Automotive

Qualification: AEC-Q101

Mounting Type: Through Hole

Package / Case: DO-247-2 (Straight Leads)

Supplier Device Package: DO-247

Operating Temperature - Junction: -40°C ~ 175°C


Product Features

No reverse recovery charge in application current range

Switching behavior independent of temperature

Dedicated to PFC applications

High forward surge capability

ECOPACK®2 compliant component

PPAP capable

Operating Tj from -40 °C to 175 °C


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