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ST IGBT Transistor STGW25M120DF3 1200 V, 25 A Trench Gate Field Cutoff

ST IGBT Transistor STGW25M120DF3 1200 V, 25 A Trench Gate Field Cutoff

Source:our siteTime:2023-09-25Views:

Shenzhen Mingjiada Electronics Co., Ltd. newly launched ST IGBT transistor STGW25M120DF3 IGBT trench type field cut-off 1200 V 50 A 375 W through-hole TO-247-3DescriptionThis device is an IGBT developed using an advanced proprietary trench-gate field-…

Shenzhen Mingjiada Electronics Co., Ltd. newly launched ST IGBT transistor STGW25M120DF3 IGBT trench type field cut-off 1200 V 50 A 375 W through-hole TO-247-3


Description

This device is an IGBT developed using an advanced proprietary trench-gate field-stop structure.The device is part of the M-Series of IGBTs, which represents an optimal balance between inverter system performance and efficiency, where low losses and short-circuit capability are critical. In addition, the positive VCE (saturation) temperature coefficient and tight parameter distribution make parallel operation safer.


All features

Maximum junction temperature: TJ = 175 °C

10 μs short-circuit withstand time

Low VCE (saturation) = 1.85 V (typical) @ IC = 25 A

Tight parameter distribution

Positive VCE (saturation) temperature coefficient

Low thermal resistance

Soft recovery and fast recovery anti-parallel diodes


Product Properties

Manufacturer: STMicroelectronics

Product Category: IGBT Transistors

Technology: Si

Package / Case: TO-247-3

Mounting Style: Through Hole

Configuration: Single

Maximum collector-emitter voltage VCEO: 1.2 kV

Collector-emitter saturation voltage: 1.85 V

Gate/Emitter Maximum Voltage: - 20 V, 20 V

Continuous collector current at 25 C: 50 A

Pd-power dissipation: 326 W

Minimum operating temperature: - 55 C

Maximum operating temperature: + 175 C

Series: M

Gate-emitter leakage current: 250 nA

Product Type: IGBT Transistors

Factory Package Quantity: 600

Sub Category: IGBTs

Unit Weight: 38 g

STGW25M120DF3.jpg

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