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Infineon N-Channel Power MOSFETs (IPW60R120P7) 600V CoolMOS™ P7 Super Junction (SJ) MOSFETs

Infineon N-Channel Power MOSFETs (IPW60R120P7) 600V CoolMOS™ P7 Super Junction (SJ) MOSFETs

Source:our siteTime:2025-02-20Views:

Shenzhen Mingjiada Electronics offers the Infineon N-Channel Power MOSFET (IPW60R120P7) 600V CoolMOS™ P7 Super Junction (SJ) MOSFET. The CoolMOS™ 7th generation platforms best-in-class R onxA and intrinsically low gate charge (Q G) ensure high effic…

Shenzhen Mingjiada Electronics offers the Infineon N-Channel Power MOSFET (IPW60R120P7) 600V CoolMOS™ P7 Super Junction (SJ) MOSFET. The CoolMOS™ 7th generation platform's best-in-class R onxA and intrinsically low gate charge (Q G) ensure high efficiency.


Function Overview

Features

-Excellent commutation strength for both hard and soft switching (PFC and LLC)

-Significantly reduced switching and conduction losses

-ESD stability better than 2kV (HBM) for all products

-Low RDS(on)*A (less than 1 ohm*mm²) makes RDS(on)/encapsulated products better than competitive products

-JEDEC certified for industrial applications


Benefits

Ease of use and fast design by reducing winding frequency and utilisation between full-power converter and full-power modulator stages

-Simplified thermal management for reduced switching and conduction losses

-Enables higher power density solutions by using products with smaller and larger dimensions.

 Enables higher power density solutions by using products with smaller dimensions and higher build quality for >2kV ESD protection

-Suitable for a variety of applications and power ranges


Potential Applications

PFC stages, hard-switching PWM stages and resonant switching stages such as PCSilverbox, adapters, LCD & PDPTV, lighting, servers, telecoms and UPS.


Parameters: IPW60R120P7

ID (@25°C) max: 29 A

ID max: 29 A

IDpuls Max: 78 A

Mounting: THT

Operating Temperature Minimum Maximum: -55 °C 150 °C

Maximum power: 95 W

Package: TO247

Number of pins: 3 pins

Polarity: N

QG (typical @10V): 36 nC

QG: 36 nC

Qgd: 11 nC

RDS (on) (@10V) max: 120 mΩ

RDS (on) max: 120 mΩ

Rth: 1.31 K/W

RthJA Max: 62 K/W

RthJC max: 1.31 K/W

VDS max: 600 V

VGS(th) Minimum Maximum: 3.5 V 3 V 4 V

IPW60R120P7.jpg

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