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Wolfspeed (NYSE: WOLF), the world leader in silicon carbide technology, recently unveiled its new Generation 4 technology platform, which has been designed from the ground up for durability and efficiency, while also reducing system cost and development time. Gen 4 technology is designed to simplify the switching behaviours and design challenges common to high-power designs, and provides a long-term roadmap for Wolfspeed's broad range of products, including power modules, discrete components, and bare-chip products. These products are currently available in 750 V, 1200 V and 2300 V ratings.

We know that every application design has a unique set of requirements,’ said Jay Cameron, senior vice president of power products at Wolfspeed. From the outset, our goal for Gen 4 technology has been to improve overall system efficiency in real-world operating environments, with a focus on delivering maximum performance at the system level. Gen 4 technology enables design engineers to create systems that are more efficient, have longer life, perform well in harsh operating environments, and have better overall system cost performance.’

Silicon carbide technology is one of the fastest growing segments of the power device market and the broader semiconductor industry. As a superior alternative to silicon, silicon carbide is ideal for high-power applications such as electric vehicle powertrain, e-mobility, renewable energy systems, battery storage systems and AI data centres, not only to improve performance but also to reduce system cost.

As the world seeks more efficient and environmentally friendly solutions to meet the world's growing demand for high-voltage energy, it is important to continue to make strategic investments to build on its technological strengths while continuing to drive innovation in key technology areas.

Innovative technologies present business opportunities,’ said Devin Dilley, president and chief product officer of EPC Power, a U.S.-based manufacturer of utility-scale inverters, ’Wolfspeed's new Generation 4 Silicon Carbide technology is enabling EPC Power to enable a disruptive change in the way energy is generated and stored on a global scale. ’

Wolfspeed has consistently driven continuous innovation and brought our silicon carbide solutions to a growing number of industries to address increasingly challenging application scenarios,’ said Tom Werner, Wolfspeed executive chairman. Our Gen 4 technology will be delivered on our highly efficient 200 mm wafers, which will allow us to achieve production scales and yields never before seen in the industry.’

Wolfspeed's Gen 4 technology is designed to improve overall system efficiency and extend application life, even in the harshest environments, while helping to reduce system cost and development time. The technology will deliver significant performance gains to designers of high-power automotive, industrial and renewable energy systems, with key benefits including:

Overall system efficiency: Reduces on-resistance by up to 21 percent and switching losses by up to 15 percent at operating temperatures.

Durability: Ensures reliable performance, including short-circuit withstand times of up to 2.3 μS for an extra margin of safety.

Lower system cost: Simplifies the design process, reducing system cost and development time.

Product Availability

Wolfspeed's Gen 4 technology is available in 750 V, 1200 V and 2300 V voltage node sizes, with power modules, discrete components and bare chip products available. new products will be available throughout 2025 and early 2026, including additional package sizes and a variety of RDSON families.

Generation 4 Technical Fact Sheet Contents:

Durable Design for the Toughest Environments

As automotive, industrial and renewable energy manufacturers continue to electrify their products, reliability and durability become critical, and Wolfspeed's Generation 4 technology is designed with this in mind, with durability as a key expectation.

With short-circuit withstand times of up to 2.3 μS, Gen 4 technology provides an extra margin of safety for critical applications. Additionally, the platform is able to achieve up to a 100x improvement in Failure Into Time (FIT) compared to previous technologies, ensuring reliable performance at all altitudes. The body-diode design improves system durability, enables faster switching speeds, reduces losses and lowers ringing, and reduces VDS overshoot by up to 80%. The Gen 4 bare die is capable of continuous operation at 185 °C and finite life operation at 200 °C, making a positive impact on product development and time-to-market for high-temperature applications. This gives designers the flexibility to push their designs to extreme performance.

Total System Efficiency: Designed to Improve System Efficiency Across the Board

Generation 4 technology has reached an important milestone in terms of overall efficiency. In both soft- and hard-switching applications, Wolfspeed's Gen 4 technology reduces specific on-resistance by up to 21 per cent at operating temperature, while in hard-switching applications, switching losses are reduced by up to 15 per cent thanks to Gen 4 technology.

These efficiency gains, combined with the high temperature on-resistance of Gen 4 technology, further demonstrate Wolfspeed's commitment to ensuring reliable performance in real-world scenarios.

System Cost Reduction: Designed to Reduce System Cost and Development Time

To address system cost concerns, Wolfspeed's new platform enables the use of smaller, more affordable passive and filtering components, ultimately reducing system development time and cost. In addition, Gen 4 technology enables up to 30% higher power output in the same package size. Gen 4 technology enables the integration of a new soft-recovery body diode design that significantly reduces EMI during reverse recovery, simplifies the EMI certification process, and enables the use of smaller EMI filters. Generation 4 MOSFET devices have capacitance ratios up to 600 for safer, smoother switching at high dV/dt without parasitic overshoot.