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Shenzhen Mingjiada Electronics Co., Ltd.
Model

VSC7427XJG-02 VSC7425XJG-02 88E6190-A0-TLA2C000

Service Telephone:86-755-83294757

Product Classification

Integrated Circuit Chip

Ethernet CXL Near Memory Accelerator and Memory Expansion Controller Analog multiplier RS-422/RS-485 Interface IC Isolated CAN transceiver Instrumentation Amplifiers PCI Express Switches Automotive System-on-Chip Security and Certification IC Equalizer/Driver/Repeater PCI Interface IC PCIe switch Interface-Multiprotocol Transceiver Power Line Transceivers Phase Locked Loop - PLL RF Sampling Transceiver Logic-Level Converter Interface IC - Multi-Rate Retimer SAS Expander Clock/Timing,Oscillators Clock/Timing - Nano Timer Digital Crosspoint Switch Ultrasound Transceivers Clock/Timing - Delay Line

IoT/IGBT Module

2G Module 4G Module 5G Module IoT Module New Energy Module Vehicle-Grade Module Smart Module Memory Module Cellular IoT Module Satellite Communication Module GNSS Module LPWA Modules IoT Chips Wireless Communication Module

Filter

Band Stop Filters Low Pass Filter Bandpass Filters SAW Filter BAW Filter Wi-Fi Filter 2.4GHz Wi-Fi Bandpass Filter Active filter RF Filter High Pass Filters 5GHz Wi-Fi Bandpass Filter 6GHz Wi-Fi Bandpass Filter

Wireless Connection

Wi-Fi 6 Bluetooth IC Bluetooth 5.1 Bluetooth 5.0 Bluetooth 5.2 Near Field Communication (NFC) WiFi Bluetooth Wi-Fi chip Ultra Wideband UWB IC GNSS Receiver Wi-Fi 4 WiFi Modules Bluetooth Low Power Wi-Fi 5 Wi-Fi 7 Wireless NIC Chips Bluetooth Module WiFi Wireless Module Bluetooth Audio SoC

AI Processor Chip

Discrete Semiconductor

Transistor - FET, MOSFET - Single Silicon Diodes Power Modules Radio frequency transistor Power MOSFET Modules Silicon Carbide (SIC) FET Modules Silicon Carbide (SIC) FETs MOSFET a canale P Transistors - RF FETs, MOSFETs MOSFET Modules Thyristor Diode array module MOSFET Transistor N-Channel MOSFET IGBT Transistor Diodes & Rectifiers Schottky Diodes & Rectifiers Single Zener Diodes Bipolar Transistor Array Power Driver Module Diodes - Rectifiers - Single Transistor - FET, MOSFET - Array Transistor - IGBT - Module Transistor - UGBT, MOSFET - Single

Power Management

Gallium Nitride (GaN) ICs Linear Regulator LDO AC-DC Controller And Voltage Regulator DC-DC Power Products Voltage Reference Battery Management Power over Ethernet (PoE) controller

Connectors

E.L.P.™ High Butt Loop Connectors ExtremePort Swift Connectors Multi-Trak™ Connectors VITA 67.3 Connectors SpaceVPX VITA 78 Connectors ExtremePort Z-Link Connectors Displayport Connectors Magnetic Jack Connectors SAS/PCIe 5.0 Connectors SAS/PCIe 4.0 Connectors Mini USB Connectors SFP112G Connectors MiniSAS HD Connectors OSFP-XD Connectors DSFP Connectors CXP Connectors QSFP Connectors OSFP Connectors SFP Connectors CFP2 Connectors Mini Cool Edge IO Connectors SlimSAS™ Connectors Mini-SAS High Density Connectors OCuLink Connectors

Sensor

Hall Effect Switches Inductive sensor Hall Effect Latch and Switch Biosensor Time-of-Flight Sensors Sensor Signal Conditioners Optical Sensors Flow Sensors Board Mounted Humidity Sensor Biometric Sensors Speed Sensors Humidity Sensor Hall effect current sensor Ultrasonic Sensor Optical Sensors,Photodiodes Humidity, Moisture Sensitive Sensors Optical detectors and sensors-Infrared detectors Board Mount Temperature Sensor Gas Sensor Position Sensor Industrial Millimetre Wave Radar Sensors Automotive Millimetre Wave Radar Sensors Image sensor Radar sensor

Memory

NOR Flash Nonvolatile Memory Random access memory RAM Static random access memory SRAM Synchronous dynamic random access memory SDRAM SSD Controllers AI Memory. F-RAM LPDDR5 uMCP EEPROM Solid State Drives - SSD Standard Serial EEPROM Automotive Grade Serial EEPROM eMMC Pseudo Static Random Access Memory (PSRAM) Erasable Programmable ROM NAND Flash Universal Flash Storage - UFS Dynamic random access memory DRAM Memory - Modules

AI Accelerators

NVMe Controllers
Latest Information
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Industry Information
Home /Industry Information /

To address memory yield, performance woes: Samsung designs new version of 1b nm DRAM from scratch

To address memory yield, performance woes: Samsung designs new version of 1b nm DRAM from scratch

Source:our siteTime:2025-01-22Views:

January 21 news, Korean media ETNews reported today that Samsung Electronics internal to cope with its 12nm DRAM memory products facing the yield and performance of the double predicament, has decided at the end of 2024 in the improvement of the exist…

January 21 news, Korean media ETNews reported today that Samsung Electronics internal to cope with its 12nm DRAM memory products facing the yield and performance of the double predicament, has decided at the end of 2024 in the improvement of the existing 1b nm process at the same time to design a new version of 1b nm DRAM from scratch.


The new 12nm DRAM process project, called D1B-P (note: P is short for Prime), is said to focus on improving energy efficiency and thermal performance, which is the same naming logic as Samsung's previous sixth-generation V-NAND improvement process, V6P.

QQ图片20250122103215.png

▲ Samsung Electronics' 32Gb DDR5 based on existing 12nm-grade process


Samsung announced the completion of the development and mass production of its 12nm-class DDR5 DRAM in December 2022 and May 2023, but this generation of process has not been successful in key areas such as LPDDR5x, and Samsung's DS department has even lost its position as the initial memory supplier of the Galaxy S25 series of mobile phones in the MX department.


In addition, the yield of the existing 12nm DRAM process was only about 60% at the time the decision was made to launch the D1B-P project, which is far below the 80%-90% required for mass production in the industry.


According to the report, Samsung Electronics ordered the necessary equipment for the D1B-P project at the end of 2024, and the process is expected to be mass-produced in 2025, with the earliest launch date in the second to third quarter of this year.

Recycle [Qorvo] Switch IC, Mingjiada Electronic——Recycle SPST Switches, SPnT Switches, nPnT Switches Return to
column Recycle Marvell ASIC Product:3NM ASIC,5NM ASIC,7NM ASIC,14NM ASIC

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