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ST STW35N60DM2 Switching Applications 600 V/28 A MDmesh DM2 Power MOSFET

ST STW35N60DM2 Switching Applications 600 V/28 A MDmesh DM2 Power MOSFET

Source:our siteTime:2025-01-03Views:

The STW35N60DM2 is an N-channel 600V, 0.094Ohm, 28A MDmesh DM2 power MOSFET ideal for switching applications.Overview:This high voltage n-channel power MOSFET is part of the MDmesh™ DM2 fast recovery diode family. It has very low recovery charge (Qrr…

The STW35N60DM2 is an N-channel 600V, 0.094Ohm, 28A MDmesh DM2 power MOSFET ideal for switching applications.


Overview:

This high voltage n-channel power MOSFET is part of the MDmesh™ DM2 fast recovery diode family. It has very low recovery charge (Qrr) and time (trr) and low RDS (on), making it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.


Features:

Fast recovery body diode

Very low gate charge and input capacitance

Low on-resistance

100% avalanche test

Extremely high dv/dt durability

Zener protection

STW35N60DM2.jpg

Specifications of STW35N60DM2:

FET type: N channel

Technology: MOSFET (Metal oxide)

Drain-source voltage (Vdss) : 600 V

Current at 25°C - Continuous Drain (Id) : 28A (Tc)

Drive voltage (Max Rds On, min Rds On) : 10V

On-resistance (Max.) at different ids and Vgs: 110 milliohm @ 14A, 10V

Vgs(th) (Max.) for different ids: 5V@250µA

Gate charge (Qg) at different Vgs (Max.) : 54 Nbc@10 V

Vgs (Max.) : ±25V

Input capacitance (Ciss) for different Vds (Max.) : 2400 PF-@100 V

FET function: -

Power dissipation (Max.) : 210W (Tc)

Operating temperature: -55°C ~ 150°C (TJ)

Installation type: Through hole

Supplier device package: TO-247-3

Package/housing: TO-247-3


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