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As data centers become more power-hungry to meet the massive processing demands of AI computing, improving energy efficiency is critical. The powerful combination of On Semiconductor's latest generation T10 PowerTrench series and EliteSiC 650V MOSFETs provides a complete solution for data center applications that offers unmatched energy efficiency and superior thermal performance in a smaller package size.

An AI-powered engine consumes more than 10 times as much power as a typical search engine request, and power demand for data centers worldwide is expected to reach about 1,000 terawatt-hours (TWh) in less than two years. From the grid to the processor, electricity needs to be converted four times to provide power for the processing of AI requests, which can result in a loss of about 12% of power. By using the T10 PowerTrench series and the EliteSiC 650V solution, the data center was able to reduce power losses by approximately 1%. If implemented in data centers around the world, this solution could reduce energy consumption by about 10 terawatt hours per year, equivalent to providing the annual electricity consumption of nearly one million homes per year.

The EliteSiC 650V MOSFETs offer superior switching performance and lower device capacitance for higher efficiency in data centers and energy storage systems. Compared to previous generation products, the new generation of silicon carbide (SiC) MOSFETs have half the gate charge and reduce the energy stored in both output capacitance (Eoss) and output charge (Qoss) by 44%. Compared to Super Junction (SJ) MOSFETs, they have no trailing current when turned off, superior performance at high temperatures, and significantly reduce switching losses. This allows customers to reduce the size of the system components while increasing the operating frequency, resulting in an overall reduction in system costs.

In addition, the T10 PowerTrench series is designed to handle the high currents critical to the DC-DC power conversion stage, providing higher power density and superior thermal performance in a compact package size. This is achieved through a shielded gate trench design with an ultra-low gate charge and on-resistance RDS(on) of less than 1 milliohm. In addition, the soft recovery diode and lower Qrr effectively reduce ringing, overshoot and electrical noise, thus ensuring optimal performance, reliability and robustness under pressure. The T10 PowerTrench series also meets the exacting standards required for automotive applications.

The combined solution also meets the strict Open rack V3 (ORV3) basic specifications required by hyperscale operators to support the next generation of high-power processors.

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