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Rohm Transistors SCT3080ARHRC15_SCT3080KRHRC15 N-Channel Silicon Carbide Power MOSFET

Rohm Transistors SCT3080ARHRC15_SCT3080KRHRC15 N-Channel Silicon Carbide Power MOSFET

Source:our siteTime:2023-06-28Views:

Shenzhen Mingjiada Electronics Co., Ltd. (Supply) (Recycle) ROHM Transistors SCT3080ARHRC15_SCT3080KRHRC15 N-Channel SiC Power MOSFETsROHM SemiconductorN-channel SiC (silicon carbide) power MOSFETs produce no tail currents during switching, resulting …

Shenzhen Mingjiada Electronics Co., Ltd. (Supply) (Recycle) ROHM Transistors SCT3080ARHRC15_SCT3080KRHRC15 N-Channel SiC Power MOSFETs


ROHM SemiconductorN-channel SiC (silicon carbide) power MOSFETs produce no tail currents during switching, resulting in faster operation and lower switching losses. Their low on-resistance and compact chip size ensure low capacitance and gate charge. These ROHM SiC Power MOSFETs have a very slight increase in on-resistance and even better package miniaturisation. They offer superior energy savings compared to standard silicon devices, where on-resistance can more than double with increasing temperature.


SCT3080ARHRC15_SCT3080KRHRC15 Product Properties

FET Type: N-channel  

Technology: MOSFET (metal oxide)  

Drain source voltage (Vdss): 650 V  

Current at 25°C - continuous drain (Id): 30 A (Tc)  

Drive voltage (max Rds On, min Rds On): 18V  

On-resistance (max) for different Id, Vgs: 104 milliohms @ 10A, 18V  

Vgs(th) for different Id (max): 5.6V @ 5mA  

Gate charge (Qg) at different Vgs (max): 48 nC @ 18 V  

Vgs (max): +22V, -4V  

Input capacitance (Ciss) at different Vds (max): 571 pF @ 500 V  

FET function: -  

Power dissipation (max): 134W  

Operating temperature: 175°C (TJ)  

Mounting type: Through-hole  

Supplier Device Package: TO-247-4L  

Package / Case: TO-247-4


Characteristics

Low on-state resistance

Fast switching speed

Much lower power consumption

Easy to work in parallel

Easy to drive

Lead-free plating

Fast reverse recovery

RoHS compliant


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