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VSC7427XJG-02 VSC7425XJG-02 88E6190-A0-TLA2C000

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Inductive sensor Hall Effect Latch and Switch Biosensor Time-of-Flight Sensors Sensor Signal Conditioners Optical Sensors Flow Sensors Board Mounted Humidity Sensor Biometric Sensors Speed Sensors Humidity Sensor Hall effect current sensor Ultrasonic Sensor Optical Sensors,Photodiodes Humidity, Moisture Sensitive Sensors Optical detectors and sensors-Infrared detectors Board Mount Temperature Sensor Gas Sensor Position Sensor Industrial Millimetre Wave Radar Sensors Automotive Millimetre Wave Radar Sensors Image sensor Radar sensor Motion sensor - Gyroscope

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(2Gbit) MT28FW02GBBA1HPC-0AAT FLASH-NOR Memory 64-LBGA

(2Gbit) MT28FW02GBBA1HPC-0AAT FLASH-NOR Memory 64-LBGA

Source:本站Time:2023-06-12Views:

MT28FW02GBBA1HPC-0AAT Description:Micron parallel NOR flash provides high density, in-place execution (XiP) performance and architectural flexibility to meet design requirements for automotive, consumer and mobile products. The device is ideal for use…

MT28FW02GBBA1HPC-0AAT Description:

Micron parallel NOR flash provides high density, in-place execution (XiP) performance and architectural flexibility to meet design requirements for automotive, consumer and mobile products. The device is ideal for use in GPS/ navigation, automotive rear-view cameras, mobile phones, smartphones and e-readers. The device also has a wide temperature range, a proven reliability track record, and can be placed in harsh industrial environments for long periods of time.


The MT28FW02GBB parallel NOR flash device can operate in page mode to run code directly from the device, minimizing system startup time. As a result, the device is well suited for high performance or process intensive applications. The device has data security options that make it ideal for long-term use in industrial applications.


Features:

• Low density, low pin count (serial)

• Easy to use

• Reliable code and data storage

• Fast read and random access times

• High durability and data retention


MT28FW02GBBA1HPC-0AAT Specifications:

Memory type: non-volatile

Memory format: Flash

Technology: FLASH-NOR

Storage capacity: 2Gbit

Memory organization: 128M x 16

Memory interface: parallel

Write cycle time - word, page: 60ns

Access time: 105 ns

Voltage - Power supply: 1.7V ~ 3.6V

Operating temperature: -40°C ~ 105°C (TA)

Mounting type: Surface mount type

Package/case: 64-LBGA

Supplier Package: 64-LBGA (11x13)

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