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【Sale INFINEON】N-Channel MOSFET IPT015N10N5 OptiMOS™ 5 Power Transistor, 100V

【Sale INFINEON】N-Channel MOSFET IPT015N10N5 OptiMOS™ 5 Power Transistor, 100V

Source:our siteTime:2023-06-12Views:

Shenzhen Mingjiada Electronics Co., Ltd. [Selling INFINEON] N-channel MOSFET IPT015N10N5 OptiMOS™ 5 Power Transistor, 100V New Original Price Advantage Quality Assurance!Features-Accurate high frequency switching and synchronous recording.-Excellent …

Shenzhen Mingjiada Electronics Co., Ltd. [Selling INFINEON] N-channel MOSFET IPT015N10N5 OptiMOS™ 5 Power Transistor, 100V New Original Price Advantage Quality Assurance!


Features

-Accurate high frequency switching and synchronous recording.

-Excellent gating product (FOM).

-Very low on-state resistance RDS(on).

-N-channel, normal level

-Tested and 100% damage free

-Lead free plating; RoHS compliant

-Certification according to JEDEC1) for target applications


Product Properties

Series: OptiMOS™  

FET Type: N-channel  

Technology: MOSFET (metal oxide)  

Drain source voltage (Vdss): 100 V  

Current at 25°C - Continuous Drain (Id): 300 A (Tc)  

Drive voltage (max Rds On, min Rds On): 6V, 10V  

On-resistance (max) at different Id, Vgs: 1.5 milliohms @ 150A, 10V  

Vgs(th) at different Id (max): 3.8V @ 250µA  

Gate charge (Qg) at different Vgs (max): 211 nC @ 10 V  

Vgs (max): ±20V  

Input capacitance (Ciss) at different Vds (max): 16000 pF @ 50 V  

FET function: -  

Power dissipation (max): 375 W (Tc)  

Operating temperature: -55°C ~ 175°C (TJ)  

Mounting Type: Surface Mount Type  

Supplier Device Package: PG-HSOF-8-1  

Package/Case: 8-PowerSFN  

Basic Part Number: IPT015

IPT015N10N5.jpg

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