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(64Mbit) S27KL0642GABHI033, S27KL0642GABHA020 Pseudo-static Random Access Memory (PSRAM)
Device description:The S27KL0642GABHI033 and S27KL0642GABHA020 are both 64Mbit pseudo-static random access memory (PSRAM) in 24-FBGA pin packages. The HYPERRAM™ device is a high-speed CMOS, self-refreshing DRAM with xSPI (Octal) interface. DRAM array…
Device description:
The S27KL0642GABHI033 and S27KL0642GABHA020 are both 64Mbit pseudo-static random access memory (PSRAM) in 24-FBGA pin packages. The HYPERRAM™ device is a high-speed CMOS, self-refreshing DRAM with xSPI (Octal) interface. DRAM arrays use dynamic cells that need to be refreshed periodically. When the memory is not actively read or written by the xSPI interface master (host), the refresh control logic within the device manages the refresh operation on the DRAM array. Since the host does not need to manage any refresh operations, it appears to the host that the DRAM array uses static units to retain data without refreshing. Therefore, memory is more accurately described as pseudo-static RAM (PSRAM).
Since DRAM units cannot refresh during read or write transactions, the host is required to limit the read or write burst transmission length to allow for internal logical refresh operations when needed. The host must limit the duration of the transaction and allow additional initial access delays at the start of a new transaction if memory indicates that a refresh operation is required.
Key features:
Compact form factor - the FBGA package ensures less board space
• Low pin count - A low pin count helps simplify the design and reduce system costs
• Low power consumption - Mixed sleep modes and partial array refreshes increase energy efficiency
• High throughput - High read/write bandwidth maximizes system performance
HYPERRAM's high throughput, low pin count, small size and high energy efficiency make it ideal for extended storage for a wide range of applications in the automotive, industrial and communications sectors.
Device Specifications:
Memory type: volatile
Memory format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Storage capacity: 64Mbit
Memory organization: 8M x 8
Memory interface: HyperBus
Clock frequency: 200 MHz
Write cycle time - word, page: 35ns
Access time: 35 ns
Voltage - Power supply: 2.7V ~ 3.6V
Operating temperature: -40°C ~ 85°C (TA)
Mounting type: Surface mount type
Package/case: 24-VBGA
Supplier Package: 24-FBGA (6x8)
Basic product number: S27KL0642
If you need, please contact us:
Email: sales@hkmjd.com
Company website: www.hkmjd.com
Time:2024-11-18
Time:2024-11-18
Time:2024-11-18
Time:2024-11-18
Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
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E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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