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INFINEON IQE057N10NM6CGSC 100V OptiMOS™ 6 MOSFETs Transistor

INFINEON IQE057N10NM6CGSC 100V OptiMOS™ 6 MOSFETs Transistor

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INFINEON IQE057N10NM6CGSC 100V OptiMOS™ 6 MOSFETs TransistorProduct Description of IQE057N10NM6CGSCIQE057N10NM6CGSC is 100V N-Channel OptiMOS™ 6 MOSFETs Transistor.Specifications of IQE057N10NM6CGSCTransistor Polarity:N-ChannelNumber of Channels:1…

INFINEON IQE057N10NM6CGSC 100V OptiMOS™ 6 MOSFETs Transistor


Product Description of IQE057N10NM6CGSC

IQE057N10NM6CGSC is 100V N-Channel OptiMOS™ 6 MOSFETs Transistor.


Specifications of IQE057N10NM6CGSC

Transistor Polarity:N-Channel

Number of Channels:1 Channel

Vds - Drain-Source Breakdown Voltage:100 V

Id - Continuous Drain Current:98 A

Rds On - Drain-Source Resistance:5.7 mOhms

Vgs - Gate-Source Voltage:- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage:3.3 V

Qg - Gate Charge:26 nC

Minimum Operating Temperature:- 55 C

Maximum Operating Temperature:+ 175 C

Pd - Power Dissipation:125 W

Channel Mode:Enhancement

Fall Time:4.6 ns

Product Type:MOSFETs

Rise Time:1.9 ns

Typical Turn-Off Delay Time:12 ns

Typical Turn-On Delay Time:5.6 ns


Features of IQE057N10NM6CGSC

N-channel, normal level

Very low on-resistance Rps(on)

Excellent gate charge X Ros(on) product (FOM)

Very low reverse recovery charge (Qr)

High avalanche energy rating

175°C operating temperature

Optimized for high frequency switching and synchronous rectification

Pb-free lead plating; RoHS compliant

Halogen-free according to IEC61249-2-21

MSL 1 classified according to J-STD-020


Package Outlines of IQE057N10NM6CGSC

QQ图片20241207131309.png


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