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INFINEON IQE057N10NM6CGSC 100V OptiMOS™ 6 MOSFETs TransistorProduct Description of IQE057N10NM6CGSCIQE057N10NM6CGSC is 100V N-Channel OptiMOS™ 6 MOSFETs Transistor.Specifications of IQE057N10NM6CGSCTransistor Polarity:N-ChannelNumber of Channels:1…
INFINEON IQE057N10NM6CGSC 100V OptiMOS™ 6 MOSFETs Transistor
Product Description of IQE057N10NM6CGSC
IQE057N10NM6CGSC is 100V N-Channel OptiMOS™ 6 MOSFETs Transistor.
Specifications of IQE057N10NM6CGSC
Transistor Polarity:N-Channel
Number of Channels:1 Channel
Vds - Drain-Source Breakdown Voltage:100 V
Id - Continuous Drain Current:98 A
Rds On - Drain-Source Resistance:5.7 mOhms
Vgs - Gate-Source Voltage:- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:3.3 V
Qg - Gate Charge:26 nC
Minimum Operating Temperature:- 55 C
Maximum Operating Temperature:+ 175 C
Pd - Power Dissipation:125 W
Channel Mode:Enhancement
Fall Time:4.6 ns
Product Type:MOSFETs
Rise Time:1.9 ns
Typical Turn-Off Delay Time:12 ns
Typical Turn-On Delay Time:5.6 ns
Features of IQE057N10NM6CGSC
N-channel, normal level
Very low on-resistance Rps(on)
Excellent gate charge X Ros(on) product (FOM)
Very low reverse recovery charge (Qr)
High avalanche energy rating
175°C operating temperature
Optimized for high frequency switching and synchronous rectification
Pb-free lead plating; RoHS compliant
Halogen-free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
Package Outlines of IQE057N10NM6CGSC
Time:2025-01-22
Time:2025-01-22
Time:2025-01-22
Time:2025-01-22
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