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Infineon Technologies introduces the EiceDRIVER Power 2EP1xxR full bridge transformer driver family for IGBT, SiC and GaN gate driver power supplies.

The 2EP1xxR series expands the Infineon power device product lineup to provide designers with isolated gate driver power solutions. This family of semiconductor devices can help achieve asymmetric output voltages to power isolated gate drivers in a cost-effective, space-saving manner. Therefore, the 2EP1xxR is particularly suitable for industrial and consumer applications that require isolated gate drivers, including solar energy applications, electric vehicle charging, energy storage systems, welding, uninterruptable power supplies, drive applications, and more.

The 2EP1xxR series features a compact TSSOP8 pin package with power integration technology and multiple optimizations to produce asymmetric output voltages. The series is optimized for asymmetric gate driver power supplies with a unique duty cycle adjustment function. These devices support a wide input voltage range of up to 20 V and also integrate temperature, short circuit and undervoltage lock (UVLO) protection to prevent unexpected system failures.

The 2EP1xxR family is available in four product models: The 2EP100R and 2EP101R are optimized for the low element count design of IGBT and SiC MOSFET gate driver power supplies; The 2EP110R allows the duty cycle to be fine-tuned to match the output voltage ratio to the application requirements of SiC and GaN power switches; The 2EP130R is optimized for a highly flexible design to meet different application requirements. The device provides level 5 overcurrent protection, transformer matching with 41 switching frequency options or external PWM synchronization, and output voltage adjustment with 41 duty cycle options.

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