sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Power MOSFET Transistors
Brand:TI
Particular Year:21+
Package:VSON-8
Delivery Date:New and Original
Stock: 2000pcs
CSD87312Q3E is a 30V common-source, dual N-channel device designed for adaptor/USB input protection. This SON 3.3 x 3.3mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications.
Specifications Of CSD87312Q3E
Technology:MOSFET (Metal Oxide)
Configuration:2 N-Channel (Dual) Common Source
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:27A
Rds On (Max) @ Id, Vgs:33mOhm @ 7A , 8V
Vgs(th) (Max) @ Id:1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:1250pF @ 15V
Power - Max:2.5W
Operating Temperature:-55°C ~ 150°C (TJ)
Features Of CSD87312Q3E
Common Source Connection
Ultra Low Drain to Drain On-Resistance
Space Saving SON 3.3 x 3.3mm Plastic Package
Optimized for 5V Gate Drive
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
Applications Of CSD87312Q3E
Adaptor/USB Input Protection for Notebook PCs and Tablets
Model
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Package
Quantity
Describe
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PG-TO220-3
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