sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:FZ2400R12HE4B9
Data Manual:FZ2400R12HE4B9.pdf
Brand:INFINEON
Particular Year:23+
Package:Module
Delivery Date:New and Original
Stock: 1000pcs
FZ2400R12HE4B9 is 1200V IHMB 190mm single switch IGBT Module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 Diode.
Product Attributes
IGBT Type: Trench Field Stop
Configuration: 3 Independent
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 3560 A
Power - Max: 13500 W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Features
Extended operation temperature Tvj op
Low switching losses
Package with CTI > 400
UL recognised
Model
Brand
Package
Quantity
Describe
ON
MODULE
2000
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INFINEON
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Module
1000
IGBT Modules Trench Field Cutoff Half Bridge 1200 V 600 A Chassis Mount Modules
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IGBT Modules Trench Field Cutoff 2 Standalone 650 V 40 A Chassis Mount Modules
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Module
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IGBT Module Trench Field Cutoff Half Bridge 1200 V 2400 A 20 mW Chassis Mount Module
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IGBT Module Grooved Field Cut-off Three Phase Inverter 1200 V 150 A 20 mW Chassis Mount AG-ECONO3B
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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