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The STGWA60V60DF is an IGBT device that uses an advanced proprietary grooved gate field cutoff structure and is part of the V series IGBT ‌. This device is designed to achieve the best compromise between conduction loss and switching loss to enhance the efficiency of very high frequency converters. It has a maximum junction temperature of 175°C, a tailless turn-off characteristic, a saturation voltage drop VCE(sat) of 1.85V at 60A (typical), and a tight distribution of parameters, suitable for parallel operation ‌. Its technical specifications and application fields are as follows:

Technical Specification

IGBT type: Grooved field cut-off

Voltage - Emitter breakdown (maximum value) : 600 V

Current - Collector (Ic) (maximum value) : 80 A

Current-collector pulse (Icm) : 240 A

Vce(on) (maximum value) at different Vge and Ic: 2.3V @ 15V, 60A

Power - Maximum: 375 W

Switching energy: 750µJ (on), 550µJ (off)

Input type: Standard

Gate charge: 334 nC

Td (on/off) value at 25°C: 60ns/208ns

Test conditions: 400V, 60A, 4.7 ohms, 15V

Reverse recovery time (trr) : 74 ns

Operating temperature: -55°C to 175°C (TJ)

Installation type: Through hole

Packaging/Shell: TO-247-3

Application field

The STGWA60V60DF IGBT device is suitable for application scenarios that require high performance and high reliability, such as industrial control, motor drive and power management, etc. Its high performance and low loss characteristics make it excel in high frequency converters, maximizing efficiency and minimizing heat generation ‌.

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