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The STGW8M120DF3 device is A 1200 V, 8 A trench gate field-cutoff low loss M series IGBT. Due to its low loss and short-circuit function, the STGW8M120DF3 IGBT is particularly suitable for inverter systems that require high performance and high efficiency ‌. Its technical specifications and application scenarios are as follows:

Technical Specification

IGBT type: Grooved field cut-off

Voltage - Emitter breakdown (maximum value) : 1200 V

Current - Collector (Ic) (maximum value) : 16 A

Current-collector pulse (Icm) : 32 A

Vce(on) (maximum value) at different Vge and Ic: 2.3V @ 15V, 8A

Power - Maximum: 167 W

Switching energy: 390µJ (on), 370µJ (off)

Input type: Standard

Gate charge: 32 nC

Td (on/off) value at 25°C: 20ns/126ns

Test conditions: 600V, 8A, 33 ohms, 15V

Reverse recovery time (trr) : 103 ns

Operating temperature: -55°C to 175°C (TJ)

Installation type: Through hole

Packaging/Shell: TO-247-3

Application scenarios

The STGW8M120DF3 is suitable for a variety of industrial applications, including:

Industrial drives ‌ : used to control motors and drive systems that provide efficient and reliable power conversion.

Uninterruptible Power Supply (UPS) ‌ : ensures continuous and stable power supply.

Solar ‌ : Used in photovoltaic systems to improve energy conversion efficiency.

Welding ‌ : Suitable for high power welding equipment, providing stable current and voltage output ‌.

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