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STGW40H120DF2 is an IGBT (Insulated Gate Bipolar Transistor), belonging to the H series, with a withstand voltage of 1200V and a current handling capacity of 40A. Youdaoplaceholder0 The device features an advanced trench gate field cut-off structure, which is characterized by high performance, fast switching and low conduction loss. Its technical specifications are as follows:

IGBT type: Grooved field cut-off

Voltage - Emitter breakdown (maximum value) : 1200 V

Current - Collector (Ic) (maximum value) : 80 A

Current-collector pulse (Icm) : 160 A

Vce(on) (maximum value) at different Vge and Ic: 2.6V @ 15V, 40A

Power - Maximum value: 468 W

Switching energy: 1mJ (on), 1.32mJ (off)

Input type: Standard

Gate charge: 187 nC

Td (on/off) value at 25°C: 18ns/152ns

Test conditions: 600V, 40A, 10 ohms, 15V

Reverse recovery time (trr) : 488 ns

Operating temperature: -55°C to 175°C (TJ)

Installation type: Through hole

Packaging/Shell: TO-247-3

Application field

The STGW40H120DF2 is suitable for applications that require high performance and fast switching, such as high-frequency converters, motor drives, industrial control, power electronics, and other fields. It optimizes the balance of conduction and switching losses, is particularly suitable for high-frequency converters, and can improve overall system efficiency ‌.

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