sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IGBT Single Tube
Brand:ST
Particular Year:25+
Package:TO-247-3
Delivery Date:New and original
Stock: 2000pcs
The STGW10M65DF2 device is an IGBT developed using an advanced proprietary trench gate field cutoff structure. This device is part of the M series IGBT and represents the best balance between the performance and efficiency of the inverter system, where low loss and short-circuit functionality are of crucial importance. In addition, the positive VCE(sat) temperature coefficient and the tight parameter distribution make the parallel operation safer. Its technical specifications and applications are as follows:
Technical Specification
IGBT type: Grooved field cut-off
Voltage - Emitter breakdown (maximum value) : 650 V
Current - Collector (Ic) (maximum value) : 20 A
Current-collector pulse (Icm) : 40 A
Vce(on) (maximum value) at different Vge and Ic: 2V @ 15V, 10A
Power - Maximum value: 115 W
Switching energy: 120µJ (on), 270µJ (off)
Input type: Standard
Gate charge: 28 nC
Td (on/off) value at 25°C: 19ns/91ns
Test conditions: 400V, 10A, 22 ohms, 15V
Reverse recovery time (trr) : 96 ns
Operating temperature: -55°C to 175°C (TJ)
Installation type: Through hole
Packaging/Shell: TO-247-3
Application field
The application fields of STGW10M65DF2 include:
Motor control
Uninterruptible power supply (UPS)
Power Factor Correction (PFC)
General-purpose inverter
Model
Brand
Package
Quantity
Describe
ROHM
TO-247GE
1500
Insulated gate bipolar transistor (IGBT) 5μs Short-Circuit Tolerance, 650V 30A, FRD Built in, TO-247GE
Microchip
TO-264-3
1500
Insulated Gate Bipolar Transistor (IGBT) PT MOS 8 Combi 900 V 80 A TO-264
Microchip
TO-264-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 600 V 75 A TO 264
Microchip
TO-247-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 600 V 50 A TO-247
Microchip
TO-247-3
2000
Insulated Gate Bipolar Transistor (IGBT) PT MOS 7 Single 1200 V 35 A TO-247
Microchip
TO-264-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 1200 V 35 A TO 264 MAX
Microchip
TO-264-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 600 V 100 A TO 264
Microchip
TO-247-3
1500
Insulated Gate Bipolar Transistor (IGBT) IGBT Fieldstop Low Frequency Combi 600 V 50 A TO-247
Microchip
TO-247-3
1500
Insulated Gate Bipolar Transistor (IGBT) FG, IGBT-CombI, 600V, TO-264 MAX, RoHS
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