sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SRAM Memory
Brand:INFINEON
Particular Year:25+
Package:48-VFBGA
Delivery Date:New and Original
Stock: 2000pcs
CY62177G30-55BAXI is high-performance CMOS,low-power (MoBL®) SRAM devices with embedded ECC. The devices is offered in single and dual chip enable options and in multiple pin configurations. The CY62177G30-55BAXI device includes an ERR pin that signals a single-bit error-detection and correction event during a read cycle.
Features Of CY62177G30-55BAXI
Ultra-low standby current
Typical standby current: 3 µA
Maximum standby current: 19 µA
High speed: 55 ns
Embedded error-correcting code (ECC) for single-bit error correction
Operating voltage range: 2.2 V to 3.6 V
1.5-V data retention
Transistor-transistor logic (TTL) compatible inputs and outputs
Error indication (ERR) pin to indicate 1-bit error detection and correction
48-pin TSOP I package configurable as 2M × 16 or 4M × 8 SRAM
Available in Pb-free 48-ball VFBGA and 48-pin TSOP I packages
Model
Brand
Package
Quantity
Describe
Cypress
VFBGA-48
5000
SRAM - Asynchronous Memory IC 4Mb Parallel 10 ns 48-VFBGA (6x8)
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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