sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SRAM Memory
Brand:INFINEON
Particular Year:25+
Package:48-VFBGA
Delivery Date:New and Original
Stock: 2000pcs
CY7S1061GE30-10BVM is a high-performance CMOS fast static RAM organized as 1,048,576 words by 16 bits. This device features fast access times (10 ns) and a unique ultra-low power Deep Sleep mode. With Sleep mode currents as low as 45 µA, the CY7S1061GE30-10BVM device combines the best features of fast and low-power SRAM in industry-standard package options. The device also features embedded ECC. ECC logic can detect and correct single-bit error in the accessed location. The CY7S1061GE30-10BVM device includes an ERR pin that signals an error-detection and correction event during a read cycle.
Features Of CY7S1061GE30-10BVM
High speed
tAA = 10 ns
Ultra-low power PowerSnooze™ device
Deep Sleep (DS) current IDS = 45 µA maximum
Low active and standby currents
ICC = 90-mA typical
ISB2 = 20-mA typical
Wide operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V
Embedded error-correcting code (ECC) for single-bit error correction
1.0-V data retention
Transistor-transistor logic (TTL) compatible inputs and outputs
Error indication (ERR) pin to indicate 1-bit error detection and correction
Available in Pb-free and Sn/Pb 48-ball VFBGA packages
Model
Brand
Package
Quantity
Describe
Cypress
VFBGA-48
5000
SRAM - Asynchronous Memory IC 4Mb Parallel 10 ns 48-VFBGA (6x8)
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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