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The SCT025H120G3-7 device is a 1200 V silicon carbide power MOSFET developed using (ST) advanced SiC MOSFET technology. The SCT025H120G3-7 features extremely low RDS(on), low capacitance, and extremely high switching performance, making it suitable for high frequency, high efficiency, system size, and weight reduction applications ‌‌.

Technical specification

Product: SCT025H120G3-7

Package/Box: H2PAK-7

Transistor polarity: N-Channel

Number of channels: 1 Channel

Vds- drain-source breakdown voltage: 1.2kV

Id- Continuous drain current: 55 A

Rds On- drain-source on-resistance: 37 mOhms

Vgs - grid - source voltage: -10 V, + 22 V

Vgs TH-gate source threshold voltage: 3 V

Qg- Grid charge: 73 nC

Minimum operating temperature: -55 C

Max. operating temperature: + 175 C

Pd- Power dissipation: 375 W

Channel mode: Enhancement

Configuration: Single

Descent time: 25 ns

Package: Reel

Encapsulation: Cut Tape

Product type: SiC MOSFETS

Rise time: 27 ns

Typical shutdown delay: 48 ns

Typical connection delay: 23 ns

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