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The SCT055TO65G3 is a 650 V silicon carbide power MOSFET transistor with extremely low on-per zone resistance (RDS(on)) and excellent switching performance. The SCT055TO65G3 features high-speed switching performance and is suitable for applications requiring high-frequency switching ‌.

Application field

Switch-mode power supplies (SMPS) ‌ : SCT055TO65G3 is suitable for switch-mode power applications that require high frequency switching and high energy efficiency ‌.

DC-DC converter ‌ : SCT055TO65G3 is a DC-to-DC voltage converter suitable for applications where efficient energy conversion is required ‌.

Technical parameter

Product: SCT055TO65G3

Package/housing: TOLL-8

Transistor polarity: N-Channel

Number of channels: 1 Channel

Vds- drain-source breakdown voltage: 650 V

Id- Continuous drain current: 30 A

Rds On- drain-source on-resistance: 72 mOhms

Vgs - grid - source voltage: -10 V, + 22 V

Vgs TH-gate source threshold voltage: 3 V

Qg- Grid charge: 31 nC

Minimum operating temperature: -55 C

Max. operating temperature: + 175 C

Pd-power dissipation: 234 W

Channel mode: Enhancement

Configuration: Single

Descent time: 13.6 ns

Package: Reel

Encapsulation: Cut Tape

Product type: SiC MOSFETS

Rise time: 5 ns

Typical shutdown delay: 19.4 ns

Typical connection delay: 9.2ns

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