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The SCTWA40N120G2V-4 device is a 1200 V silicon carbide power MOSFET transistor using ST's advanced 2nd generation SiC MOSFET technology with extremely low on-resistance and significantly reduced energy loss ‌. The SCTWA40N120G2V-4 is suitable for a variety of industrial applications, including industrial motor control and power converters ‌.

Technical parameter

Product: SCTWA40N120G2V-4

Package/Box: HiP247-4

Transistor polarity: N-Channel

Number of channels: 1 Channel

Vds- drain-source breakdown voltage: 1.2kV

Id- Continuous drain current: 36 A

Rds On- drain-source on-resistance: 100 mOhms

Vgs - grid - source voltage: -10 V, + 22 V

Vgs TH-gate source threshold voltage: 2.45V

Qg- Grid charge: 61 nC

Minimum operating temperature: -55 C

Maximum operating temperature: + 200 C

Pd- Power dissipation: 277 W

Channel mode: Enhancement

Configuration: Single

Descent time: 7.7ns

Package: Tube

Product: SiC MOSFETS

Product type: SiC MOSFETS

Rise time: 9.8 ns

Factory packing quantity: 600

Subcategory: Transistors

Technology: SiC

Typical shutdown delay: 21.8 ns

Typical connection delay: 12.9 ns

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