sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IGBT Transistor
Brand:INFINEON
Particular Year:24+
Package:PG-TO247-3
Delivery Date:New and Original
Stock: 50000pcs
IKW75N65EH5 High-speed 650 V, hard-switching IGBT TRENCHSTOP™ 5 is co-packaged with a RAPID 1 fast soft reverse parallel diode in a TO-247 package, defined as a ‘best-in-class’ IGBT.
IKW75N65EH5 Device Attributes
Manufacturer: Infineon Technologies
Family: TrenchStop™
Package: Tubes
Part Status: On Sale
IGBT Type: Trench
Voltage - Collector Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 90 A
Current - Collector Pulse (Icm): 300 A
Vce(on) at varying Vge, Ic (max): 2.1V @ 15V, 75A
Power - Max: 395 W
Switching Energy: 2.3mJ (on), 900µJ (off)
Input Type: Standard
Gate Charge: 160 nC
Td (on/off) value at 25°C: 28ns/174ns
Test Conditions: 400V, 75A, 8 Ohms, 15V
Reverse Recovery Time (trr): 92 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package/Housing: TO-247-3
Supplier Device Package: PG-TO247-3
Applications
Uninterruptible power supplies
Solar converters
Welding converters
Medium to high frequency switching converters
Model
Brand
Package
Quantity
Describe
ROHM
TO-247GE
1500
Insulated gate bipolar transistor (IGBT) 5μs Short-Circuit Tolerance, 650V 30A, FRD Built in, TO-247GE
Microchip
TO-264-3
1500
Insulated Gate Bipolar Transistor (IGBT) PT MOS 8 Combi 900 V 80 A TO-264
Microchip
TO-264-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 600 V 75 A TO 264
Microchip
TO-247-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 600 V 50 A TO-247
Microchip
TO-247-3
2000
Insulated Gate Bipolar Transistor (IGBT) PT MOS 7 Single 1200 V 35 A TO-247
Microchip
TO-264-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 1200 V 35 A TO 264 MAX
Microchip
TO-264-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 600 V 100 A TO 264
Microchip
TO-247-3
1500
Insulated Gate Bipolar Transistor (IGBT) IGBT Fieldstop Low Frequency Combi 600 V 50 A TO-247
Microchip
TO-247-3
1500
Insulated Gate Bipolar Transistor (IGBT) FG, IGBT-CombI, 600V, TO-264 MAX, RoHS
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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