sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:MOSFETs Transistor
Brand:INFINEON
Particular Year:24+
Package:WHTFN-9
Delivery Date:New and Original
Stock: 2000pcs
IQE057N10NM6CGSC is 100V N-Channel OptiMOS™ 6 MOSFETs Transistor.
Specifications of IQE057N10NM6CGSC
Transistor Polarity:N-Channel
Number of Channels:1 Channel
Vds - Drain-Source Breakdown Voltage:100 V
Id - Continuous Drain Current:98 A
Rds On - Drain-Source Resistance:5.7 mOhms
Vgs - Gate-Source Voltage:- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:3.3 V
Qg - Gate Charge:26 nC
Minimum Operating Temperature:- 55 C
Maximum Operating Temperature:+ 175 C
Pd - Power Dissipation:125 W
Channel Mode:Enhancement
Fall Time:4.6 ns
Product Type:MOSFETs
Rise Time:1.9 ns
Typical Turn-Off Delay Time:12 ns
Typical Turn-On Delay Time:5.6 ns
Features of IQE057N10NM6CGSC
N-channel, normal level
Very low on-resistance Rps(on)
Excellent gate charge X Ros(on) product (FOM)
Very low reverse recovery charge (Qr)
High avalanche energy rating
175°C operating temperature
Optimized for high frequency switching and synchronous rectification
Pb-free lead plating; RoHS compliant
Halogen-free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
Model
Brand
Package
Quantity
Describe
INFINEON
TO-220-3
3000
600V CoolMOS™ P7 Superjunction (SJ) MOSFET -- N-Channel Power MOSFET Transistor
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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