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The IGLT65R110D2 gallium nitride power transistor improves efficiency in high frequency operation. Part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards for a highly reliable design with excellent efficiency. It is available in a top-cooled TOLT package designed for optimal power dissipation in a variety of industrial applications.

Features (IGLT65R110D2)

650 V electronic mode power transistor

Ultra-fast switching

No reverse recovery charge

Reversible conduction

Low gate charge, low output charge

Excellent commutation ruggedness

Low dynamic RDS(on)

High ESD robustness: 2 kV HBM - 1 kV CDM

Top-cooled package

JEDEC certified (JESD47, JESD22)

Advantage (IGLT65R110D2)

Supports high operating frequencies

Achieves highest system efficiency

Enables ultra-high power density designs

Enables BOM cost savings

Specifications (IGLT65R110D2)

Product Category: GaN Field Effect Transistors

Mounting Style: SMD/SMT

Package / Case: PG-HDSOP-16

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds - drain-source breakdown voltage: 650 V

Id-Continuous drain current: 15 A

Rds On-drain on-resistance: 140 mOhms

Vgs - gate-source voltage: - 10 V

Vgs th - gate-source threshold voltage: 1.6 V

Qg - gate charge: 3.4 nC

Minimum operating temperature: - 40 C

Maximum operating temperature: + 150 C

Applications (IGLT65R110D2)

AC-DC power conversion for telecom infrastructure

Data centre and computing solutions

Electric vehicle charging

Industrial power supplies

Photovoltaics

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