sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:GaN Transistors
Brand:NXP
Particular Year:24+
Package:OM-780-4S4S
Delivery Date:New and Original
Stock: 3000pcs
A5G19H605W19NR3: 1930MHz - 1995MHz, 85W Average, 48V, Airfast® GaN RF Power Transistor
Model: A5G19H605W19NR3
Package: OM-780-4S4S
Type: Airfast® GaN RF Power Transistor
The A5G19H605W19NR3 is a 48V, Airfast® GaN RF power transistor designed for mobile base station applications requiring wide instantaneous bandwidth from 1930MHz to 1995MHz.
A5G19H605W19NR3 - Product Specifications:
Technology: GaN
Frequency: 1.93GHz ~ 1.995GHz
Gain: 15.1dB
Voltage - Test: 48 V
Current - Test: 300 mA
Power - Output: 85W
Voltage - Rated: 125 V
Mounting Type: Surface Mount
Package/Housing: OM-780-4S4S
Model
Brand
Package
Quantity
Describe
NXP
OM-780-4S4S-8
2000
717-850 MHz, 112 W average, 50 V Airfast® RF power GaN transistor
INFINEON
PG-DSO-20
2000
CoolGaN™ Power Transistor 650V G5 for ultimate efficiency, power density and reliability
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