sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) MOSFET
Brand:Microchip
Particular Year:24+
Package:TO-247-4
Delivery Date:New and original
Stock: 3000pcs
Microchip's Silicon carbide (SiC) power MOSFETs product line delivers higher performance than silicon MOSFETs and silicon IGBT solutions while reducing the total cost of ownership for high-voltage applications. The MSC080SMA330B4N device is a 3300 V, 80 mΩ SiC MOSFET in a TO-247 4-pin package with source sensing.
Features:
• Low capacitance and low grid charge
• Fast switching speed due to low internal gate resistance (ESR)
• Stable operation at high junction temperature, TJ (max) = 150 °C
• Fast and reliable body diodes
• Excellent avalanche stability
• RoHS compliant
Applications:
• Photovoltaic inverters, converters and industrial motor drivers
• Smart grid transmission and distribution
• Induction heating and welding
• H/EV powertrain and EV charger
• Power and distribution
Model
Brand
Package
Quantity
Describe
ON
TO-247-4
3000
Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
ST
HiP247-3
3000
1200 V Automotive grade Silicon Carbide Power MOSFET, 27 Mω, 56 A, HiP247
ON
TO-247-3
3000
Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-3L
ON
TO-247-4
3000
Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
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Microchip Technology Incorporated (Nasdaq: MCHP) Microchip Semiconductor is the worlds leading supplier of microcontrollers and analog semiconductors, providing low-risk product development, lower system totals for thousands of consumer products world…
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