sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide MOSFET Module
Brand:INFINEON
Particular Year:24+
Package:Module
Delivery Date:New and Original
Stock: 2000pcs
FF8MR12W1M1HB70 is EasyDUAL™ 2B CoolSiC™ MOSFET half-bridge module 1200 V, 8 mΩ G1 with integrated NTC temperature sensor, PressFIT Contact Technology and aluminium nitride ceramic.
Feature Of FF8MR12W1M1HB70
Best in class with 12.25mm height
Leading edge WBG material
Very low module stray inductance
Enhanced CoolSiC™ MOSFET Gen 1
With enhanced 1 trench technology
Enlarged gate drive voltage window
Voltage window from 15 to 18 & 0 to -5 V
Extended maximum gate-source voltages
Gate-source voltages of +23 V and -10 V
Tvjop: overload condition up to 175°C
Integrated NTC temperature sensor
Benefits Of FF8MR12W1M1HB70
Outstanding module efficiency
System cost advantages
System efficiency improvement
Reduced cooling requirements
Enabling higher frequency
Increase of power density
Thermal conductivity of DCB material
Applications Of FF8MR12W1M1HB70
Energy Storage Systems
EV charging
Fuel-cell DC-DC boost converter
Photovoltaic
Uninterruptible power supplies (UPS)
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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