sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:MSC050SDA120BCT
Data Manual:MSC050SDA120BCT.pdf
Brand:Microchip
Particular Year:23+
Package:TO-247-3
Delivery Date:New original
Stock: 2000pcs
The MSC050SDA120BCT device is a 1200V SiC Schottky Barrier diode (SBD) device in the TO-247 package. The SiC solution focuses on high performance, helping to maximize system efficiency and minimize system weight and size.
Product specifications:
Technology: SiC (silicon carbide) Schottky
Voltage-dc reverse (Vr) (Max.) : 1200 V
Current - Average rectifier (Io) : 109A
Different If voltage - forward (Vf) : 1.8V @ 50 A
Speed: None Recovery time > 500mA (Io)
Reverse recovery time (trr) : 0 ns
Current - reverse leakage at different Vr: 200µA @ 1200V
Capacitance in different Vr and F: 246pF @ 400V, 1MHz
Installation type: Through hole
Package/case: TO-247-3
Supplier component package: TO-247-3
Operating temperature - junction: -55°C ~ 175°C
Basic product number: MSC050
Application:
H/EV powertrain and EV charger
Power supply and distribution
PV inverter, converter, and industrial motor drives
Smart grid transmission and distribution
Aviation
Model
Brand
Package
Quantity
Describe
Microchip
TO-247-3
3000
700V, 50A Silicon Carbide (SiC) Schottky Barrier Diode (SBD), TO-247-3
Microchip
TO-247-2
3000
700V, 50A Silicon Carbide (SiC) Schottky Barrier Diode (SBD), TO-247-2
Microchip
TO-247-2
3000
700V Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs), TO-247-2
Microchip
TO-247-2
3000
700V, 24A Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs), TO-247-2
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Microchip Technology Incorporated (Nasdaq: MCHP) Microchip Semiconductor is the worlds leading supplier of microcontrollers and analog semiconductors, providing low-risk product development, lower system totals for thousands of consumer products world…
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