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Commodity Model:DMWSH120H43SM4

Trade Name:Silicon Carbide (SiC) MOSFET

Brand:Diodes

Particular Year:24+

Package:TO-247-4

Delivery Date:New and original

Stock: 3000pcs

Quantity:
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Product Parameters

Manufacturer
Diodes
Model
DMWSH120H43SM4
Package
TO-247-4
Describe
Silicon Carbide (SiC) MOSFET through hole N channel 1200 V 72.7A (Tc) 341W (Tc) TO-247-4

Product Description

The DMWSH120H43SM4 is a 1200V, 72.7A single n-channel silicon carbide power MOSFET in a 4-pin TO-247 package designed TO minimize on-resistance and maintain excellent switching performance. These power MOSFETs are ideal for use in EV high-power DC-DC converters, EV charging systems, solar inverters, AC-DC traction inverters, and automotive motor drives.


Specifications of DMWSH120H43SM4:

FET type: N channel

Technology: MOSFET (Metal oxide)

Drain-source voltage (Vdss) : 1200 V

Current at 25°C - Continuous Drain (Id) : 72.7A (Tc)

Drive voltage (Max Rds On, min Rds On) : 15V

On-resistance (Max.) at different ids and Vgs: 43mm @ 40A, 15V

Vgs(th) (Max.) : 3.6V@11.5mA for different ids

Gate charge (Qg) at different Vgs (Max.) : 105 N@15 V

Vgs (Max) : +19V, -8V

Input capacitance (Ciss) at different Vds (Max.) : 2187 PF-@1000 V

FET function: -

Power dissipation (Max.) : 341W (Tc)

Operating temperature: -55°C ~ 175°C (TJ)

Grade: -

Qualification: -

Installation type: Through hole

Supplier device package: TO-247-4

Package/housing: TO-247-4


Associated Products

Model

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Package

Quantity

Describe

NTHL032N065M3S

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Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-3L

NTH4L032N065M3S

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Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L

NTBG032N065M3S

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D2PAK-7

3000

Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, D2PAK-7L

NVBG032N065M3S

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D2PAK-7

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Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, D2PAK-7L

MSC180SMA120SDT

Microchip

TO-263-7

3000

1200V, 180 mΩ Silicon Carbide (SiC) N channel MOSFETs

MSC060SMA070SDT

Microchip

TO-263-7

3000

700V, 60 mΩ Silicon carbide (SiC) N channel MOSFETs

MSC360SMA120SCT

Microchip

PSMT-16

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1200V, 360 mΩ Silicon Carbide (SiC) N channel MOSFETs

MSC080SMA120SCT

Microchip

PSMT-16

3000

1200V, 80 mΩ Silicon Carbide (SiC) N channel MOSFET

MSC090SMA070SCT

Microchip

PSMT-16

3000

700V, 90 mΩ Silicon carbide (SiC) N channel MOSFETs

MSC060SMA070SCT

Microchip

PSMT-16

3000

700V, 60 mΩ Silicon carbide (SiC) N channel MOSFETs

FAQ

  • 1.Is the inventory and price seen on the platform accurate?

    A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.

  • 2.Are all our products genuine?

    A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.

  • 3.Can you provide the qualification certificate of the original factory or agent?

    A: at present, our self-employed brands TI,ST,ADI,NXP,LATTICE,CYPRESS,INFINEON,XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.

  • 4.Can I make an inquiry through the company's website?

    A: You can inquire through the website, or by phone and email.

  • 5.When can I deliver the goods after placing an order? How long will it take to get there?

    A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.

  • 6.Can the company issue an invoice?

    A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.

Diodes

Diodes

Founded in 1966, Diodes Inc. is a Nasdaq-listed company in the United States. It is a transfer investment company of Dunnan Technology. It is mainly engaged in the manufacture and production of discrete semiconductor components. Diodes Inc. has a part…

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