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DMWSH120H90SM4Q 1200V N-channel Silicon Carbide power MOSFETs are designed to minimize on-resistance while maintaining excellent switching performance, making them ideal for high-efficiency power management applications.

Specifications of DMWSH120H90SM4Q:

FET type: N channel

Technology: SiC (Silicon carbide junction transistor)

Drain-source voltage (Vdss) : 1200 V

Current at 25°C - Continuous drain (Id) : 40A (Tc)

Drive voltage (Max Rds On, min Rds On) : 15V

On-resistance (Max.) at different ids and Vgs: 97.5 milliohm @ 20A, 15V

Vgs(th) (Max.) : 3.5V@5mA for different ids

Gate charge (Qg) at different Vgs (Max.) : 47.6N@15V

Vgs (Max) : +19V, -8V

Input capacitance (Ciss) at different Vds (Max.) : 1112 PF-@1000 V

FET function: -

Power dissipation (Max) : 235W (Tc)

Operating temperature: -55°C ~ 175°C (TJ)

Class: Automobile class

Qualification: AEC-Q101

Installation type: Through hole

Supplier device package: TO-247-4

Package/housing: TO-247-4

• 1.Is the inventory and price seen on the platform accurate?

  A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.

• 2.Are all our products genuine?

  A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.

• 3.Can you provide the qualification certificate of the original factory or agent?

  A: at present, our self-employed brands TI，ST，ADI，NXP，LATTICE，CYPRESS，INFINEON，XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.

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• 6.Can the company issue an invoice?

  A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.