sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) MOSFET
Brand:Diodes
Particular Year:24+
Package:TO-247-4
Delivery Date:New and original
Stock: 3000pcs
The DMWSH120H90SM4 is a 1200V n-channel power MOSFET in the TO-247-4 package. Designed to minimize on-resistance while maintaining excellent switching performance, this MOSFET is ideal for high-efficiency power management applications.
Specifications of DMWSH120H90SM4:
Channel mode: Enhancement
Configuration: Single
Descent time: 6.4ns
Id- Continuous drain current: 40 A
Maximum operating temperature: + 175°C
Minimum operating temperature: -55 °C
Installation style: Through Hole
Number of channels: 1 Channel
Package/housing: TO-247-4
Package: Tube
Pd- Power dissipation: 235 W
Product type: SiC MOSFETS
Qg- Grid charge: 51.1nC
Rds On- drain-source on-resistance: 97.5 mOhms
Rise time: 21.3ns
Factory packaging quantity: 30
Subcategory: Transistors
Technology: SiC
Transistor polarity: N-Channel
Typical shutdown delay: 17.4 ns
Typical connection delay: 9.1ns
Vds- drain-source breakdown voltage: 1.2kV
Vgs - grid - source voltage: -4 V, + 15 V
Vgs TH-gate source threshold voltage: 3.5V
Model
Brand
Package
Quantity
Describe
TOSHIBA
TO-247-4
4333
SiC MOSFET Through hole N channel 1200 V 20A (Tc) 107W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 36A (Tc) 170W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 40A (Tc) 182W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 100A (Tc) 431W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 100A (Tc) 342W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 58A (Tc) 156W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N channel 650 V 20A (Tc) 76W (Tc) TO-247-4L (X)
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Founded in 1966, Diodes Inc. is a Nasdaq-listed company in the United States. It is a transfer investment company of Dunnan Technology. It is mainly engaged in the manufacture and production of discrete semiconductor components. Diodes Inc. has a part…
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