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sales@hkmjd.com
sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide MOSFETs
Brand:Wolfspeed
Particular Year:24+
Package:TO-247-3
Delivery Date:New and Original
Stock: 5000pcs
C2M0280120D—Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode
Features
• C2MTM Silicon Carbide (SiC) MOSFET technology
• High blocking voltage with low On-resistance
• High speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Qrr)
• Halogen free, RoHS compliant
Specifications
FET: Type N-channel
Technology: SiCFET (silicon carbide)
Drain-Source Voltage (Vdss): 1200 V
Current at 25°C - Continuous Drain (Id): 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
On-resistance (max) at different Id, Vgs: 370 mOhm @ 6A, 20V
Vgs(th) at different Id (max): 2.8V @ 1.25mA (typical)
Gate Charge (Qg) (max) at varying Vgs: 20.4 nC @ 20 V
Vgs (max): +25V, -10V
Input capacitance (Ciss) at different Vds (max): 259 pF @ 1000 V
Power Dissipation (Max): 62.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package/Housing: TO-247-3
Applications
• Renewable energy
• High voltage DC/DC converters
• Switch Mode Power Supplies
• UPS
Model
Brand
Package
Quantity
Describe
TOSHIBA
TO-247-4
4333
SiC MOSFET Through hole N channel 1200 V 20A (Tc) 107W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 36A (Tc) 170W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 40A (Tc) 182W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 100A (Tc) 431W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 100A (Tc) 342W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 58A (Tc) 156W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N channel 650 V 20A (Tc) 76W (Tc) TO-247-4L (X)
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E-mail:sales@hkmjd.com
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