sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:F-RAM (Ferroelectric RAM)
Brand:Cypress
Particular Year:24+
Package:44-TSOP
Delivery Date:New and Original
Stock: 1000pcs
The CY15B102N-ZS60XM is a 128K × 16 non-volatile memory that reads and writes like standard SRAM. Ferroelectric Random Access Memory (F-RAM) is a non-volatile memory, which means that data is retained after a power failure. It retains data for more than 121 years while eliminating the reliability issues, functional drawbacks, and system design complexity of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make F-RAM superior to other types of memory.
The CY15B102N operates like any other RAM device and can be used as a direct replacement for standard SRAM in a system; read cycles can be triggered by CE or by changing the address, and write cycles can be triggered by CE or WE. The F-RAM memory is non-volatile due to the unique ferroelectric memory process. These features make the CY15B102N ideal for non-volatile memory applications that require frequent or fast writes.
The device is available in a 400 mil, 44-pin TSOP-II surface mount package. Device specifications are guaranteed over the military temperature range of -55 °C to +125 °C.
Functionality
2-Mbit ferroelectric random access memory (F-RAM™) logic structured as 128K × 16
Configurable to 256K × 8 using UB and LB
High endurance of 10 trillion (1013) reads and writes
121-year data retention
NoDelay™ Write
30 ns cycle time page mode operation
Advanced high-reliability ferroelectric process
SRAM compatible
Industry-standard 128K × 16 SRAM pinouts
60 ns access time, 90 ns cycle time
Advanced Features
Software programmable block write protection
Better than battery-backed SRAM modules
No battery issues
Monolithic reliability
True surface mount solution with no rework steps
Excellent resistance to moisture, shock and vibration
Low power consumption
Active current 7 mA (typical)
Standby current 120 A (typical)
Low voltage operation: VDD = 2.0 V to 3.6 V
Model
Brand
Package
Quantity
Describe
Cypress
FBGA-24
5000
FRAM (Ferroelectric RAM) Memory IC 16Mb SPI - Quad I/O, QPI 108 MHz 6.7 ns 24-FBGA (6x8)
Cypress
FBGA-24
5000
FRAM (Ferroelectric RAM) Memory IC 16Mb SPI - Quad I/O, QPI 108 MHz 6.7 ns 24-FBGA (6x8)
Cypress
FBGA-24
5000
FRAM (Ferroelectric RAM) Memory IC 8Mb SPI - Quad I/O, QPI 108 MHz 6.7 ns 24-FBGA (6x8)
Cypress
FBGA-24
5000
FRAM (Ferroelectric RAM) Memory IC 16Mb SPI 20 MHz 20 ns 24-FBGA (6x8)
Cypress
FBGA-24
5000
FRAM (Ferroelectric RAM) Memory IC 8Mb SPI - Quad I/O, QPI 108 MHz 6.7 ns 24-FBGA (6x8)
Cypress
FBGA-24
5000
FRAM (Ferroelectric RAM) Memory IC 8Mb SPI 50 MHz 9 ns 24-FBGA (6x8)
Cypress
8-UFLGA
5000
FRAM (Ferroelectric RAM) Memory IC 4Mb SPI - Quad I/O 108 MHz 6.7 ns 8-UFLGA (3.28x3.23)
Cypress
8-UFLGA
5000
FRAM (Ferroelectric RAM) Memory IC 8Mb SPI 20 MHz 20 ns 8-UFLGA (3.28x3.23)
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Cypress is a well-known electronic chip manufacturer, whose Chinese name is Cypress. Cypress is listed on the New York Stock Exchange and provides chip solutions in a wide range of fields such as data communications and consumer electronics. The compa…
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