sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:RF JFET Transistors
Brand:Wolfspeed
Particular Year:24+
Package:H-87265J-2
Delivery Date:New and Original
Stock: 1100pcs
The GTVA262701FA-V2-R2 is a 270 W silicon carbide gallium nitride high electron mobility transistor (HEMT) for multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally enhanced surface mount package with no ear flanges.
Product Category: RF Junction Gate Field Effect Transistors (RF JFET) Transistors
Transistor Type: HEMT
Technology: GaN-on-SiC
Operating Frequency: 2.496 GHz to 2.69 GHz
Gain: 17 dB
Transistor Polarity: N-Channel
Vds-drain-source breakdown voltage: 125 V
Vgs-gate-source breakdown voltage: - 10 V to 2 V
Id-continuous drain current: 12 A
Output power: 270 W
Maximum operating temperature: + 225 C
Pd-Power Dissipation: -
Mounting Style: Flange Mount
Package / Case: H-87265J-2
Application: Cellular Power Amplifier
Product Type: RF JFET Transistors
Factory Package Quantity: 250
Sub Category: Transistors
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