sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SiC MOSFETs
Brand:ROHM
Particular Year:24+
Package:TO-247-4L
Delivery Date:New and Original
Stock: 5000pcs
The SCT3040KRC15 is a trench gate SiC MOSFET ideally suited for server power supplies, solar inverters, and electric vehicle charging stations requiring high efficiency, etc. The 4-pin package that separates the power supply source pin from the driver source pin enables high speed switching performance to be fully exploited. In particular, the conduction loss can be significantly improved. Compared with the conventional 3-pin package (TO-247N), the combined conduction loss and turn-off loss is expected to be reduced by about 35%.
Features:
Low on-resistance
Fast switching speed
Fast reverse recovery
Easy parallel connection
Simple drive
Lead-free plating; RoHS compliant
SCT3040KRC15 Product Attributes:
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain-Source Voltage (Vdss): 1200 V
Current at 25°C - Continuous Drain (Id): 55A (Tj)
Drive voltage (max. Rds On, min. Rds On): 18V
On-resistance (max) at different Id, Vgs: 52 mOhm @ 20A, 18V
Vgs(th) at different Id (max): 5.6V @ 10mA
Gate Charge (Qg) at Vgs (max): 107 nC @ 18 V
Vgs (max): +22V, -4V
Input capacitance (Ciss) at varying Vds (max): 1337 pF @ 800 V
Power dissipation (max): 262W
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-4L
Package/Housing: TO-247-4
Model
Brand
Package
Quantity
Describe
Wolfspeed
TO-247-3
2000
N-Channel Enhancement Mode Silicon Carbide Power MOSFET Transistors
Wolfspeed
TO-247-3
2000
N-Channel Enhancement Mode Silicon Carbide Power MOSFET Transistors
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ROHM Co., Ltd. is one of the worlds leading semiconductor manufacturers, headquartered in Kyoto, Japan, ROHM designs and manufactures semiconductors, integrated circuits and other electronic components. These components have a place in the rapidly cha…
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